Formation of Si- and Ge-based Full-Heusler Alloy Thin Films using SOI and GOI Substrates for the Half-metallic Source and Drain of Spin Transistors
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2013 ◽
Vol 690-693
◽
pp. 590-593
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2005 ◽
Vol 41
(10)
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pp. 2802-2804
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2013 ◽
Vol 77
(3)
◽
pp. 85-88
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