Anomalous VFB Shift in High-k Gate Stacks - Is its Origin at the Top or Bottom Interface ? -

ECS Transactions ◽

10.1149/1.3206602 ◽

2019 ◽

Vol 25 (6) ◽

pp. 3-16 ◽

Author(s):

AKira Toriumi ◽

Toshihide Nabatame

Keyword(s):

Gate Stacks ◽

High K ◽

Bottom Interface

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Anomalous VFB Shift in High-k Gate Stacks: Is Its Origin at the Top or Bottom Interface?

ECS Meeting Abstracts ◽

10.1149/ma2009-02/25/2105 ◽

2009 ◽

Keyword(s):

Gate Stacks ◽

High K ◽

Bottom Interface

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High-$k$/Metal Gate Stacks

IEEE Electron Device Letters ◽

10.1109/led.2010.2071851 ◽

2010 ◽

Author(s):

Won-Ho Choi ◽

Chang-Young Kang ◽

Jung-Woo Oh ◽

Byoung-Hun Lee ◽

Prashant Majhi ◽

...

Keyword(s):

High Performance ◽

Negative Bias ◽

Gate Stacks ◽

Hot Carrier ◽

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Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5677952 ◽

2010 ◽

Author(s):

F. M. Bufler ◽

V. Aubry-Fortuna ◽

A. Bournel ◽

M. Braccioli ◽

P. Dollfus ◽

...

Keyword(s):

Quantum Corrections ◽

Gate Stacks ◽

High K ◽

Semiclassical Transport

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The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks

ECS Transactions ◽

10.1149/1.3122087 ◽

2019 ◽

Vol 19 (2) ◽

pp. 87-99 ◽

Author(s):

Felice Crupi ◽

Paolo Magnone ◽

Eddy Simoen ◽

Luigi Pantisano ◽

Gino Giusi ◽

...

Keyword(s):

Gate Stacks ◽

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High-k Gate Stacks Influence on Characteristics of Nano-scale MOSFET Structures

Proceedings of the 2nd International Conference on Modelling, Identification and Control ◽

10.2991/mic-15.2015.39 ◽

2015 ◽

Author(s):

Konstantin O. Petrosyants ◽

Dmitriy A. Popov

Keyword(s):

Gate Stacks ◽

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.081303 ◽

2012 ◽

Vol 51 ◽

pp. 081303 ◽

Author(s):

Shinya Hibino ◽

Tomonori Nishimura ◽

Kosuke Nagashio ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Layer Formation ◽

Gate Stacks ◽

Dipole Layer ◽

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Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

Applied Physics Letters ◽

10.1063/1.3103314 ◽

2009 ◽

Vol 94 (12) ◽

pp. 122905 ◽

Author(s):

Yuki Kita ◽

Shinichi Yoshida ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Kenji Shiraishi ◽

...

Keyword(s):

Work Function ◽

Systematic Study ◽

Gate Stacks ◽

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Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

Microelectronics Reliability ◽

10.1016/j.microrel.2012.06.011 ◽

2012 ◽

Vol 52 (9-10) ◽

pp. 1901-1904 ◽

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Chiho Lee ◽

Jeongsoo Park ◽

...

Keyword(s):

Gate Stacks ◽

Hot Carrier ◽

High K ◽

Enhanced Degradation

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