Extrinsic Effects of Indirect Radiative Transition of Ge

2019 ◽  
Vol 33 (6) ◽  
pp. 555-562 ◽  
Author(s):  
Sun-Rong Jan ◽  
Cheng-Han Lee ◽  
Tzu-Huan Cheng ◽  
Yen-Yu Chen ◽  
K.-L. Peng ◽  
...  
Keyword(s):  
Radiative Transition ◽  
Extrinsic Effects

Extrinsic effects in the dynamics and selection of cellular arrays

10.2514/3.508 ◽  
1994 ◽  
Vol 8 (1) ◽  
pp. 113-118 ◽  
Author(s):  
B. Billia ◽  
H. Jamgotchian ◽  
H. Nguyen Thi ◽  
P. Cerisier ◽  
R. Trivedi
Keyword(s):  
Extrinsic Effects ◽  
Selection Of ◽  
Cellular Arrays

Radiative transition dynamics of holmium ions-doped LaF3 nanocrystals

2017 ◽  
Vol 29 (2) ◽  
pp. 1607-1613 ◽  
Author(s):  
Hoang Manh Ha ◽  
Tran Thi Quynh Hoa ◽  
Le Van Vu ◽  
Nguyen Ngoc Long
Keyword(s):  
Radiative Transition ◽  
Transition Dynamics

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S.G. Gasan-Zade ◽  
M.V. Strikha ◽  
G.A. Shepelskii
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Strong Electric Field ◽  
Radiative Transition ◽  
Hot Electrons ◽  
Acceptor Level ◽  
Threshold Values ◽  
Red Emission ◽  
V Band ◽  
Infra Red

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

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