ABSTRACTTwo-dimensional arrays of silver nanocylinders fabricated by electron-beam lithography are used to demonstrate plasmon-enhanced near-green light emission from nitride semiconductor quantum wells. Large enhancements in peak photoluminescence intensity (up to a factor of over 3) are obtained, accompanied by a substantial reduction in recombination lifetime indicative of increased internal quantum efficiency. The measured enhancement factors exhibit a strong dependence on the nanoparticle dimensions, underscoring the importance of geometrical tuning for this application.
Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays