Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers

2005 ◽  
Vol 22 (9) ◽  
pp. 2407-2410 ◽  
Author(s):  
Cui Can ◽  
Yang De-Ren ◽  
Ma Xiang-Yang ◽  
Fu Li-Ming ◽  
Fan Rui-Xin ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing

2010 ◽  
Vol 49 (8) ◽  
pp. 080205 ◽  
Author(s):  
Koji Araki ◽  
Haruo Sudo ◽  
Tatsuhiko Aoki ◽  
Takeshi Senda ◽  
Hiromichi Isogai ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Thermal Strain ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

2015 ◽  
Vol 242 ◽  
pp. 218-223
Author(s):  
Peng Dong ◽  
Xing Bo Liang ◽  
Da Xi Tian ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Enhancement Effect ◽  
Epitaxial Silicon ◽  
High Concentration ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
The One

We report a strategy feasible for improving the internal gettering (IG) capability of iron (Fe) for n/n+ epitaxial silicon wafers using the heavily arsenic (As)-doped Czochralski (CZ) silicon wafers as the substrates. The n/n+ epitaxial silicon wafers were subjected to the two-step anneal of 650 °C/16 h + 1000 °C/16 h following the rapid thermal processing (RTP) at 1250 °C in argon (Ar) or nitrogen (N2) atmosphere. It is found that the prior RTP in N2 atmosphere exhibits much stronger enhancement effect on oxygen precipitation (OP) in the substrates than that in Ar atmosphere, thereby leading to a better IG capability of Fe contamination on the epitaxial wafer. In comparison with the RTP in Ar atmosphere, the one in N2 atmosphere injects not only vacancies but also nitrogen atoms of high concentration into the heavily As-doped silicon substrate. The co-action of vacancy and nitrogen leads to the enhanced OP in the substrate and therefore the better IG capability for the n/n+ epitaxial silicon wafer.

scholarly journals Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

2013 ◽  
Vol 113 (16) ◽  
pp. 163510 ◽  
Author(s):  
Xinpeng Zhang ◽  
Chao Gao ◽  
Maosen Fu ◽  
Xiangyang Ma ◽  
Jan Vanhellemont ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres

2013 ◽  
Vol 205-206 ◽  
pp. 238-242 ◽  
Author(s):  
Ling Mao Xu ◽  
Chao Gao ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dislocation Motion ◽  
Nitrogen Atmosphere ◽  
Dislocation Glide ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Pinning Effect ◽  
Oxygen Precipitates ◽  
Critical Resolved Shear Stress

Effects of prior rapid thermal processing (RTP) under different atmospheres on the motion of dislocations initiated from indentations in Czochralski (CZ) silicon have been investigated. It is found that the maximum gliding distances of dislocations in the specimens with the prior RTP under nitrogen (N2) atmosphere are much smaller than those in the specimens with the prior RTP under argon (Ar) atmosphere. This is also the case when the specimens received annealing for oxygen precipitation (OP) subsequent to the RTP at 1250 °C under N2 and Ar atmospheres, respectively. It is believed that the nitrogen atoms introduced during the RTP under nitrogen atmosphere or the oxygen precipitates facilitated by the RTP-introduced nitrogen atoms can exhibit pinning effect on the dislocation motion, which increases the critical resolved shear stress for dislocation glide.

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