Chemical Mechanical Polishing of Ge in Hydrogen Peroxide-Based Silica Slurries: Role of Ionic Strength

2011 ◽  
Vol 158 (11) ◽  
pp. H1152 ◽  
Author(s):  
J. B. Matovu ◽  
N. K. Penta ◽  
S. Peddeti ◽  
S. V. Babu
Keyword(s):  
Hydrogen Peroxide ◽  
Ionic Strength ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Slurry Retention and Transport during Chemical-Mechanical Polishing of Copper

2001 ◽  
Vol 671 ◽  
Author(s):  
Anurag Jindal ◽  
Ying Li ◽  
Satish Narayanan ◽  
S. V. Babu
Keyword(s):  
Hydrogen Peroxide ◽  
Chemical Mechanical Polishing ◽  
Chemical Species ◽  
Mechanical Polishing ◽  
Abrasive Particles ◽  
Step Flow ◽  
Flow Experiments

ABSTRACTThis work investigates the retention and transport of chemical species and abrasive particles during chemical-mechanical polishing (CMP) of copper (Cu). “Slurry step-flow” experiments, in which the concentrations of the chemicals and abrasives in the slurry are altered in steps during polishing were conducted with hydrogen peroxide (H2O2)/glycine based slurries. Two different pads, Suba-500 and IC 1400 (with k grooves), were compared in terms of their slurry retention and transport characteristics. With these experiments, it has been shown that both the abrasives and chemicals are constantly replaced during a typical CMP process. Better polishing performance of the IC 1400 over Suba 500 is a result of improved transport of the chemicals and the abrasives between the wafer/pad interface.

ChemInform Abstract: Present and Future Role of Chemical Mechanical Polishing in Wafer Bonding

ChemInform ◽  
2010 ◽  
Vol 29 (31) ◽  
pp. no-no
Author(s):  
C. GUI ◽  
M. ELWENSPOEK ◽  
J. G. E. GARDENIERS ◽  
P. V. LAMBECK
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Future Role
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