scholarly journals Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical–mechanical polishing in citric acid slurries

2004 ◽  
Vol 87 (2-3) ◽  
pp. 387-393 ◽  
Author(s):  
Jui-Chin Chen ◽  
Wen-Ta Tsai
Keyword(s):  
Hydrogen Peroxide ◽  
Citric Acid ◽  
Chemical Mechanical Polishing ◽  
Surface Characteristics ◽  
Mechanical Polishing

Slurry Retention and Transport during Chemical-Mechanical Polishing of Copper

2001 ◽  
Vol 671 ◽  
Author(s):  
Anurag Jindal ◽  
Ying Li ◽  
Satish Narayanan ◽  
S. V. Babu
Keyword(s):  
Hydrogen Peroxide ◽  
Chemical Mechanical Polishing ◽  
Chemical Species ◽  
Mechanical Polishing ◽  
Abrasive Particles ◽  
Step Flow ◽  
Flow Experiments

ABSTRACTThis work investigates the retention and transport of chemical species and abrasive particles during chemical-mechanical polishing (CMP) of copper (Cu). “Slurry step-flow” experiments, in which the concentrations of the chemicals and abrasives in the slurry are altered in steps during polishing were conducted with hydrogen peroxide (H2O2)/glycine based slurries. Two different pads, Suba-500 and IC 1400 (with k grooves), were compared in terms of their slurry retention and transport characteristics. With these experiments, it has been shown that both the abrasives and chemicals are constantly replaced during a typical CMP process. Better polishing performance of the IC 1400 over Suba 500 is a result of improved transport of the chemicals and the abrasives between the wafer/pad interface.

Research on Effects of Slurry Additives in Cu CMP for ULSI Manufacturing

2006 ◽  
Vol 304-305 ◽  
pp. 350-354 ◽  
Author(s):  
X.J. Li ◽  
Dong Ming Guo ◽  
R.K. Ren ◽  
Zhu Ji Jin
Keyword(s):  
Hydrogen Peroxide ◽  
Surface Roughness ◽  
Electrochemical Impedance Spectroscopy ◽  
Citric Acid ◽  
Chemical Mechanical Polishing ◽  
Electrochemical Impedance ◽  
Etching Rate ◽  
Complexing Agent ◽  
Cu Cmp ◽  
Static Etching

In this paper, in order to analyze the oxidation, dissolution and corrosive inhibition effects of additives in the slurry for copper Chemical-mechanical polishing(CMP), the slurry(pH5) with the peroxide as an oxidant, the citric acid as a complexing agent and the benzotriazole(BTA) as an inhibitor is studied. The static etching rate and polishing rate of the Cu-H2O2-Citric acid-BTA slurry are measured. The electrochemical behavior involved in the dissolution and corrosive inhibition of copper in the solutions containing additives is investigated by the electrochemical impedance spectroscopy (EIS) studies. The surface roughness is measured using ZYGO 3-D surface profiler. It is observed that when the slurry is with only 5wt% peroxide existing, copper is stable and slight etching rate on the copper is produced, and the etching rate is only 8.7nm/min. When 0.6wt% citric acid presents after adding 5wt% hydrogen peroxide, the etching rate will increase by 5.3 times, with a blue complexing product emerging. When the inhibitor BTA is added, the corrosion will be effectively restrained. From the EIS results, the impedance of copper in 5wt% peroxide solution which is in passivation can be greatly decreased by adding the citric acid as a complexing reagent. And the impedance of copper in the solution containing peroxide and citric acid can be increased by the addition of BTA. The surface roughness of the wafer polished with the slurry of 5wt% peroxide+0.6wt% citric acid+0.12wt% BTA slurry is Ra 4.7 Å.

Chemical-Mechanical Polishing of Wafers with Copper Film by Nano-Scale Abrasives

2008 ◽  
Vol 594 ◽  
pp. 181-186
Author(s):  
Jhy Cherng Tsai ◽  
Jin Fong Kao
Keyword(s):  
Citric Acid ◽  
Size Effect ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Copper Film ◽  
Mechanical Polishing ◽  
Al2o3 Powder ◽  
Abrasive Size

In this paper, experiments are designed and conducted to investigate the effects of abrasive size for Chemical-Mechanical Polishing (CMP) of copper film under different additives in HNO3-based polishing slurries. Alumina modified colloidal silica 100S (φ26nm), 200S (φ40nm) and Al2O3 (φ90nm), are used as polishing abrasives in this study. Experiments showed the following results. (1) With citric acid as an additive to slurry, the removal rate (RR) of the CMP process increases with abrasive size. Surface quality, however, becomes worse at the same time. (2) With benzotriazole (BTA) as an additive, RR of the slurry with Al2O3 powder is slightly higher but it does not increase with the abrasive size in general. Surface quality tends to be worse at the same time though it is not as strong as that in the slurry with citric acid as the additive. (3) The size effect of abrasive on RR with citric acid as additive is stronger than that with BTA.

Study on the Surface Characteristics of Polishing Pad Used in Chemical Mechanical Polishing

2010 ◽  
Vol 102-104 ◽  
pp. 724-728
Author(s):  
Hong Gao ◽  
Jian Xiu Su
Keyword(s):  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
Surface Characteristics ◽  
Average Diameter ◽  
Mechanical Polishing ◽  
Average Depth ◽  
Surface Porosity ◽  
Asperity Height ◽  
Average Volume ◽  
Polishing Pad

Studying the surface characteristics of polishing pad helps to understand and analyze the chemical mechanical polishing (CMP) mechanism and optimize the microscopic structure of polishing pad. The surface roughness, organizational structure, porosity, depth and diameter of micro-pore, distribution of asperity and profile bearing rate of IC1000/Suba IV polishing pad were studied with the profilometer ZYGO 5022, AFM and SEM. The results of measurement and calculation show that the surface roughness is 6.8μm , the root mean square ( RMS ) roughness is 9.4μm, the surface porosity is 56 % , the micro-pore average diameter is 36μm , the micro-pore average depth is 20μm , the micro-pore average spacing is 43μm , the micro-pore average volume is 550/mm2 and the asperity height obeys Gaussian distribution.

Sign in / Sign up

Export Citation Format

Share Document