Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

10.21203/rs.3.rs-188713/v1 ◽

2021 ◽

Author(s):

Femi Robert

Keyword(s):

Carbon Nanotube ◽

Transient Analysis ◽

Electronic Devices ◽

Transient Temperature ◽

Nanoelectronic Devices ◽

Cu Interconnects ◽

Electrical Interconnects ◽

Steady State Temperature ◽

The Given ◽

The Continuum

Abstract This paper exhibits the electrothermal modelling and evaluation of Carbon Nanotube (CNT) based electrical interconnects for electronic devices. The continuum model of the CNT is considered and the temperature across interconnect is predicted for the given power. Finite element modelling software COMSOL Multiphysics is used to carry out the simulations. The results are compared with Al and Cu interconnects. An electrothermal analysis is also carried out to obtain the temperature for the given power for Single-Walled CNT, Double-Walled CNT, Triple-Walled CNT, and Multi-Walled CNT. Results show that the CNT interconnects performs better when compared to Al and Cu interconnects. The power withstanding capability of CNT is 68.75 times more than Al and 32.35 times more than Cu. Based on the transient analysis, the time taken by the CNT interconnects to reach a steady temperature is obtained as 0.007 ns. On the application of power, Cu and Al interconnects takes 0.1 ns to reach the steady-state temperature. The nanostructured CNT based electrical interconnects would play a considerable role in replacing Cu and Al electrical interconnect applications for micro and nanoelectronic devices.

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Well-Aligned In-situ Formed Open-End Carbon Nanotube for Device and Assembly Applications

MRS Proceedings ◽

10.1557/proc-0968-v06-05 ◽

2006 ◽

Vol 968 ◽

Author(s):

Lingbo Zhu ◽

ChingPing Wong

Keyword(s):

Carbon Nanotube ◽

Thermal Management ◽

Field Enhancement ◽

High Carbon ◽

Electrical Interconnects ◽

Emission Testing ◽

Reaction Furnace ◽

Poor Adhesion ◽

Good Agreement

ABSTRACTCarbon nanotubes (CNTs) have been proposed for applications in microelectronic applications, especially for electrical interconnects, thermal management, and nanodevices, due to their excellent electrical, thermal, and mechanical properties. In this paper, we reported a simple process to achieve simultaneous CNT growth and opening of the CNT ends, while keeping alignment of the original CNT films/arrays. The addition of relatively low reactivity oxidizing agents (water) into the reaction furnace enables the feasibility. We proposed using novel CNT transfer technology, enabled by open-ended CNTs, to circumvent the high carbon nanotube (CNT) growth temperature and poor adhesion with the substrates that currently plague CNT implementation. The process is featured with separation of high-temperature CNT growth and low-temperature CNT device assembly. Field emission testing of the as-assembled CNT devices is in a good agreement with the Fowler-Nordheim (FN) equation, with a field enhancement factor of 4540.

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