Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

2021 ◽  
Author(s):  
Femi Robert
Keyword(s):  
Carbon Nanotube ◽  
Transient Analysis ◽  
Electronic Devices ◽  
Transient Temperature ◽  
Nanoelectronic Devices ◽  
Cu Interconnects ◽  
Electrical Interconnects ◽  
Steady State Temperature ◽  
The Given ◽  
The Continuum

Abstract This paper exhibits the electrothermal modelling and evaluation of Carbon Nanotube (CNT) based electrical interconnects for electronic devices. The continuum model of the CNT is considered and the temperature across interconnect is predicted for the given power. Finite element modelling software COMSOL Multiphysics is used to carry out the simulations. The results are compared with Al and Cu interconnects. An electrothermal analysis is also carried out to obtain the temperature for the given power for Single-Walled CNT, Double-Walled CNT, Triple-Walled CNT, and Multi-Walled CNT. Results show that the CNT interconnects performs better when compared to Al and Cu interconnects. The power withstanding capability of CNT is 68.75 times more than Al and 32.35 times more than Cu. Based on the transient analysis, the time taken by the CNT interconnects to reach a steady temperature is obtained as 0.007 ns. On the application of power, Cu and Al interconnects takes 0.1 ns to reach the steady-state temperature. The nanostructured CNT based electrical interconnects would play a considerable role in replacing Cu and Al electrical interconnect applications for micro and nanoelectronic devices.

scholarly journals Influence of Defect Number, Distribution Continuity and Orientation on Tensile Strengths of the CNT-Based Networks: A Molecular Dynamics Study

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Xian Shi ◽  
Xiaoqiao He ◽  
Ligang Sun ◽  
Xuefeng Liu
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Tensile Strength ◽  
Carbon Nanotube ◽  
Electronic Devices ◽  
Underlying Mechanism ◽  
Force Transmission ◽  
Tensile Direction ◽  
Defect Number ◽  
Number Distribution

Abstract Networks based on carbon nanotube (CNT) have been widely utilized to fabricate flexible electronic devices, but defects inevitably exist in these structures. In this study, we investigate the influence of the CNT-unit defects on the mechanical properties of a honeycomb CNT-based network, super carbon nanotube (SCNT), through molecular dynamics simulations. Results show that tensile strengths of the defective SCNTs are affected by the defect number, distribution continuity and orientation. Single-defect brings 0 ~ 25% reduction of the tensile strength with the dependency on defect position and the reduction is over 50% when the defect number increases to three. The distribution continuity induces up to 20% differences of tensile strengths for SCNTs with the same defect number. A smaller arranging angle of defects to the tensile direction leads to a higher tensile strength. Defective SCNTs possess various modes of stress concentration with different concentration degrees under the combined effect of defect number, arranging direction and continuity, for which the underlying mechanism can be explained by the effective crack length of the fracture mechanics. Fundamentally, the force transmission mode of the SCNT controls the influence of defects and the cases that breaking more force transmission paths cause larger decreases of tensile strengths. Defects are non-negligible factors of the mechanical properties of CNT-based networks and understanding the influence of defects on CNT-based networks is valuable to achieve the proper design of CNT-based electronic devices with better performances. Graphical Abstract

scholarly journals Progress in Cooling Nanoelectronic Devices to Ultra-Low Temperatures

2020 ◽  
Vol 201 (5-6) ◽  
pp. 772-802 ◽  
Author(s):  
A. T. Jones ◽  
C. P. Scheller ◽  
J. R. Prance ◽  
Y. B. Kalyoncu ◽  
D. M. Zumbühl ◽  
...  
Keyword(s):  
State Of The Art ◽  
Electronic Devices ◽  
Bulk Materials ◽  
Nanoelectronic Devices ◽  
Current State ◽  
Physical Effects ◽  
On Chip ◽  
Nanoscale Physics ◽  
A Current ◽  
Made In

AbstractHere we review recent progress in cooling micro-/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the lowest reported on-chip electron temperature having remained around 4 mK for more than 15 years. This is despite the fact that microkelvin temperatures have been accessible in bulk materials since the mid-twentieth century. In this review, we describe progress made in the last 5 years using new cooling techniques. Developments have been driven by improvements in the understanding of nanoscale physics, material properties and heat flow in electronic devices at ultralow temperatures and have involved collaboration between universities and institutes, physicists and engineers. We hope that this review will serve as a summary of the current state of the art and provide a roadmap for future developments. We focus on techniques that have shown, in experiment, the potential to reach sub-millikelvin electron temperatures. In particular, we focus on on-chip demagnetisation refrigeration. Multiple groups have used this technique to reach temperatures around 1 mK, with a current lowest temperature below 0.5 mK.

scholarly journals Polyacrylonitrile‐carbon Nanotube‐polyacrylonitrile: A Versatile Robust Platform for Flexible Multifunctional Electronic Devices in Medical Applications

2019 ◽  
Vol 304 (6) ◽  
pp. 1900014 ◽  
Author(s):  
Toan Dinh ◽  
Van Dau ◽  
Canh‐Dung Tran ◽  
Tuan‐Khoa Nguyen ◽  
Hoang‐Phuong Phan ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electronic Devices ◽  
Medical Applications

The nature of flux variations in the continua and broad-line regions of selected active galactic nuclei

2020 ◽  
Vol 496 (1) ◽  
pp. 784-800
Author(s):  
A Bewketu Belete ◽  
L J Goicoechea ◽  
B L Canto Martins ◽  
I C Leão ◽  
J R De Medeiros
Keyword(s):  
Active Galactic Nuclei ◽  
Moving Average ◽  
Sampling Rate ◽  
Galactic Nuclei ◽  
Small Sample ◽  
Light Curves ◽  
Ngc 4151 ◽  
The Given ◽  
Ngc 7469 ◽  
The Continuum

ABSTRACT We present a multifractal analysis of the long-term light curves of a small sample of type 1 active galactic nuclei: NGC 4151, Arp 102B, 3C 390.3, E1821+643 and NGC 7469. We aim to investigate how the degrees of multifractality of the continuum and Hβ line vary among the five different objects and to check whether the multifractal behaviours of the continuum and the Hβ line correlate with standard accretion parameters. The backward (θ  = 0) one-dimensional multifractal detrended moving average procedure was applied to light curves covering the full observation period and partial observation periods containing an equal number of epochs for each object. We detected multifractal signatures for the continua of NGC 4151, Arp 102B and 3C 390.3 and for the Hβ lines of NGC 4151 and 3C 390.3. However, we found nearly monofractal signatures for the continua of E1821+643 and NGC 7469, as well as for the Hβ lines of Arp 102B, E1821+643 and NGC 7469. In addition, we did not find any correlations between the degree of multifractality of the Hβ line and accretion parameters, while the degree of multifractality of the continuum seems to correlate with the Eddington ratio (i.e. the smaller the ratio is, the stronger the degree of multifractality). The given method is not robust, and these results should be taken with caution. Future analysis of the sampling rate and other properties of the light curves should help with better constraining and understanding these results.

On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrication of Carbon-Nanotube-Based Electronic Devices

2008 ◽  
Vol 7 (5) ◽  
pp. 624-627 ◽  
Author(s):  
Gyoung-Ho Buh ◽  
Jea-Ho Hwang ◽  
Eun-Kyoung Jeon ◽  
Hye-Mi So ◽  
Jeong-O Lee ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electrical Breakdown ◽  
Electronic Devices ◽  
On Chip

Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

2016 ◽  
Vol 8 (32) ◽  
pp. 20527-20533 ◽  
Author(s):  
Huaping Li ◽  
Hongyu Liu ◽  
Yifan Tang ◽  
Wenmin Guo ◽  
Lili Zhou ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Large Scale ◽  
Electronic Devices ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon
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