scholarly journals Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments

2021 ◽  
Author(s):  
YAO-JEN LEE ◽  
Tien-Sheng Chao ◽  
Sheng-Ti Chung ◽  
Ta-Chun Cho ◽  
Chun-Jung Su
Keyword(s):  
Mos Capacitors

Discrimination between volume and interface traps in C (V) and photo I(V) experiments on 10-30 nm MOS capacitors

1993 ◽  
Vol 3 (11) ◽  
pp. 2101-2112
Author(s):  
J. Peisner ◽  
Y. Sangare ◽  
G. Lévêque
Keyword(s):  
Interface Traps ◽  
Mos Capacitors

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

Yb/InSe/SiO₂/Au Straddling-Type Tunneling Devices Designed As Photosensors, MOS Capacitors, and Gigahertz Bandstop Filters

2021 ◽  
Vol 68 (3) ◽  
pp. 1093-1100
Author(s):  
Latifah Hamad Khalid Alfhaid ◽  
A. F. Qasrawi ◽  
Sabah E. AlGarni
Keyword(s):  
Mos Capacitors ◽  
Tunneling Devices ◽  
Bandstop Filters

Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

2021 ◽  
Vol 129 (19) ◽  
pp. 195705
Author(s):  
Christopher J. Klingshirn ◽  
Asanka Jayawardena ◽  
Sarit Dhar ◽  
Rahul P. Ramamurthy ◽  
Dallas Morisette ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Mos Capacitors ◽  
Analytical Electron ◽  
Interface Structures

Interface Optimization of Passivated Er₂O₃/Al₂O₃/InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism

2021 ◽  
pp. 1-7
Author(s):  
Lesheng Qiao ◽  
Gang He ◽  
Lin Hao ◽  
Jinyu Lu ◽  
Qian Gao ◽  
...  
Keyword(s):  
Leakage Current ◽  
Conduction Mechanism ◽  
Mos Capacitors ◽  
Current Conduction

Correction to "A comparative analysis of substrate current generation mechanisms in tunneling mos capacitors"

2002 ◽  
Vol 49 (10) ◽  
pp. 1844-1844
Author(s):  
P. Palestri ◽  
A.D. Serra ◽  
L. Selmi ◽  
M. Pavesi ◽  
P.L. Rigolli ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Current Generation ◽  
Mos Capacitors ◽  
Substrate Current ◽  
Generation Mechanisms

Tetragonal ZrO2-Gated Ge MOS Capacitors Fabricated on Si Substrate

2019 ◽  
Vol 28 (5) ◽  
pp. 153-160 ◽  
Author(s):  
Min-Lin Wu ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Yung-Hsien Wu
Keyword(s):  
Tetragonal Zro2 ◽  
Si Substrate ◽  
Mos Capacitors

Charge Trapping and Decay Mechanism in Post Deposition Annealed Er2O3 MOS Capacitors by Nanoscopic and Macroscopic Characterization

2015 ◽  
Vol 15 (4) ◽  
pp. 610-616 ◽  
Author(s):  
Robin Khosla ◽  
Pawan Kumar ◽  
Satinder K. Sharma
Keyword(s):  
Charge Trapping ◽  
Mos Capacitors ◽  
Decay Mechanism ◽  
Post Deposition

Modeling MOS capacitors to extract Si—SiO2interface trap densities in the presence of arbitrary doping profiles

1986 ◽  
Vol 33 (6) ◽  
pp. 759-765 ◽  
Author(s):  
H.S. Bennett ◽  
M. Gaitan ◽  
P. Roitman ◽  
T.J. Russell ◽  
J.S. Suehle
Keyword(s):  
Mos Capacitors ◽  
Doping Profiles

A real-time C-V measurement circuit for MOS capacitors under current stressing

1991 ◽  
Vol 40 (4) ◽  
pp. 775-777
Author(s):  
Chung Len Lee ◽  
Tan Fu Lei ◽  
Jaw Huang Ho ◽  
Wen Tong Wang
Keyword(s):  
Real Time ◽  
Measurement Circuit ◽  
Mos Capacitors ◽  
Current Stressing
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