Electrical, Optical, and Field-Emission Properties of Phosphorus-Doped ZnO Nanowire Arrays and P-N Homojunction of ZnO nanowires

2016 ◽  
Vol 45 (21) ◽  
pp. 8777-8782 ◽  
Author(s):  
Guojing Wang ◽  
Mingyang Li ◽  
Chienhua Chen ◽  
Shasha Lv ◽  
Jiecui Liao ◽  
...  

A simple approach to Ag2S quantum dot modification was used to tune the field emission properties of ZnO nanowire arrays.


2010 ◽  
Vol 26 (09) ◽  
pp. 2563-2568
Author(s):  
ZHANG Huan ◽  
◽  
LI Meng-Ke ◽  
ZHANG Jing ◽  
YU Li-Yuan ◽  
...  

2015 ◽  
Vol 17 (47) ◽  
pp. 31822-31829 ◽  
Author(s):  
Guojing Wang ◽  
Zhengcao Li ◽  
Mingyang Li ◽  
Jiecui Liao ◽  
Chienhua Chen ◽  
...  

A new method to improve the field emission properties of ZnO by graphene oxide and silver nanocomposite modification.


2009 ◽  
Vol 9 (9) ◽  
pp. 5586-5591 ◽  
Author(s):  
Tandra Ghoshal ◽  
Subhajit Biswas ◽  
Soumitra Kar ◽  
S. K. De

Small ◽  
2015 ◽  
Vol 11 (36) ◽  
pp. 4785-4792 ◽  
Author(s):  
Dali Shao ◽  
Jian Gao ◽  
Guoqing Xin ◽  
Yiping Wang ◽  
Lu Li ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 240
Author(s):  
Yangyang Zhao ◽  
Yicong Chen ◽  
Guofu Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
...  

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.


RSC Advances ◽  
2015 ◽  
Vol 5 (83) ◽  
pp. 67752-67758 ◽  
Author(s):  
S. L. Cheng ◽  
J. H. Syu ◽  
S. Y. Liao ◽  
C. F. Lin ◽  
P. Y. Yeh

We report here the first study of the growth kinetics of vertically-aligned ZnO nanowire arrays grown on Al-doped ZnO (AZO) seed layer-coated substrates by a hydrothermal method.


Sign in / Sign up

Export Citation Format

Share Document