Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties

Small ◽  
2015 ◽  
Vol 11 (36) ◽  
pp. 4785-4792 ◽  
Author(s):  
Dali Shao ◽  
Jian Gao ◽  
Guoqing Xin ◽  
Yiping Wang ◽  
Lu Li ◽  
...  
2017 ◽  
Vol 89 ◽  
pp. 592-597 ◽  
Author(s):  
Hong Yan Yue ◽  
Hong Zhang ◽  
Shuo Huang ◽  
Xuan Yu Lin ◽  
Xin Gao ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 240
Author(s):  
Yangyang Zhao ◽  
Yicong Chen ◽  
Guofu Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
...  

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.


2013 ◽  
Vol 282 ◽  
pp. 782-788 ◽  
Author(s):  
O. Lupan ◽  
T. Pauporté ◽  
B. Viana ◽  
P. Aschehoug ◽  
M. Ahmadi ◽  
...  

Nano Letters ◽  
2012 ◽  
Vol 12 (8) ◽  
pp. 3994-4000 ◽  
Author(s):  
Dandan Wang ◽  
Qian Chen ◽  
Guozhong Xing ◽  
Jiabao Yi ◽  
Saidur Rahman Bakaul ◽  
...  

2016 ◽  
Vol 16 (5) ◽  
pp. 4814-4819 ◽  
Author(s):  
Yoo Sang Jeon ◽  
Hyo Won Seo ◽  
Su Hyo Kim ◽  
Young Keun Kim

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