Fabrication and Characterization of Mn-doped ZnO Nanocrystals into a SiO2 Layer for the Application of Spin-Tunneling Devices

2004 ◽  
Vol 108 (20) ◽  
pp. 6303-6310 ◽  
Author(s):  
Ranjani Viswanatha ◽  
Sameer Sapra ◽  
Subhra Sen Gupta ◽  
B. Satpati ◽  
P. V. Satyam ◽  
...  

2021 ◽  
Author(s):  
Manish Baboo Agarwal ◽  
M. Malaidurai ◽  
Sumit Sahoo ◽  
R. Thangavel

2011 ◽  
Vol 21 (5) ◽  
pp. 363-367 ◽  
Author(s):  
Jia-yue XU ◽  
Qing-bo HE ◽  
Hui SHEN ◽  
Min JIN ◽  
Bao-liang LU ◽  
...  

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.


2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.


2011 ◽  
Vol 32 (2) ◽  
pp. 154-158
Author(s):  
冯秋菊 FENG Qiu-ju ◽  
冯宇 FENG Yu ◽  
梁红伟 LIANG Hong-wei ◽  
王珏 WANG Jue ◽  
陶鹏程 TAO Peng-cheng ◽  
...  

2020 ◽  
Vol 167 (6) ◽  
pp. 067506 ◽  
Author(s):  
Yen-Lin Chu ◽  
Liang-Wen Ji ◽  
Yu-Jen Hsiao ◽  
Hao-Ying Lu ◽  
Sheng-Joue Young ◽  
...  

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