Recent Progress in Dilute Nitride-antimonide Materials for High Speed Photonics and Electronics

2009 ◽  
Keyword(s):  
High Speed ◽  
Recent Progress ◽  
Dilute Nitride

Recent progress in an ‘ultra-high speed, ultra-large capacity, ultra-long distance’ optical transmission system (Invited Paper)

2016 ◽  
Vol 14 (12) ◽  
pp. 120003-120007 ◽  
Author(s):  
Shaohua Yu Shaohua Yu ◽  
Ming Luo Ming Luo ◽  
Xiang Li Xiang Li ◽  
Rong Hu Rong Hu ◽  
Ying Qiu Ying Qiu ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Transmission ◽  
Recent Progress ◽  
Transmission System ◽  
Long Distance ◽  
Large Capacity ◽  
Ultra High Speed

Recent progress on high-speed separated base flows

1995 ◽  
Author(s):  
J Dutton ◽  
J Herrin ◽  
M Molezzi ◽  
T Mathur ◽  
K Smith
Keyword(s):  
High Speed ◽  
Recent Progress ◽  
Base Flows

scholarly journals Recent Progress with Next Generation High-Speed Ethernet Optical Device Technology

2019 ◽  
Vol E102.C (4) ◽  
pp. 324-332
Author(s):  
Hiroshi ARUGA ◽  
Keita MOCHIZUKI ◽  
Tadashi MURAO ◽  
Mizuki SHIRAO
Keyword(s):  
High Speed ◽  
Recent Progress ◽  
Next Generation ◽  
Optical Device ◽  
Device Technology

Recent progress of high-speed burst-mode transceiver technologies for TDM-PON systems

2012 ◽  
Author(s):  
Satoshi Yoshima ◽  
Masaki Noda ◽  
Eitetsu Igawa ◽  
Satoshi Shirai ◽  
Kenji Ishii ◽  
...  
Keyword(s):  
High Speed ◽  
Recent Progress ◽  
Burst Mode

(GaIn)(NAsSb): MBE GROWTH, HETEROSTRUCTURE AND NANOPHOTONIC DEVICES

2007 ◽  
Vol 06 (03n04) ◽  
pp. 269-274
Author(s):  
JAMES S. HARRIS
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
High Speed ◽  
Active Regions ◽  
Phase Segregation ◽  
Plasma Source ◽  
Cavity Surface ◽  
Dilute Nitride ◽  
Vertical Cavity Surface ◽  
Emitting Lasers

Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become excellent candidates for a variety of lower cost 1.2–1.6 μm lasers, optical amplifiers, and high power Raman pump lasers that will be required in the networks to provide high speed communications to the desktop. Because these quantum well active regions can be grown on GaAs , the distributed mirror technology for vertical cavity surface emitting lasers coupling into waveguides and fibers and photonic crystal structures can be readily combined with GaInNAsSb active regions to produce a variety of advanced photonic devices that will be crucial for advanced photonic integrated circuits. GaInNAs ( Sb ) provides several new challenges compared to earlier III–V alloys because of the limited solubility of N , phase segregation, nonradiative defects caused by the low growth temperature, and ion damage from the N plasma source. This paper describes progress in overcoming some of the material challenges and progress in realizing record setting edge emitting lasers, the first VCSELs operating at 1.5 μm based on GaInNAsSb and integrated photonic crystal and nanoaperture lasers.

Dilute Nitride SOAs for High-Speed Data Processing in Variable Temperature Conditions

2015 ◽  
Author(s):  
G. Giannoulis ◽  
V.-M. Korpijärvi ◽  
N. Iliadis ◽  
J. Mäkelä ◽  
J. Viheriälä ◽  
...  
Keyword(s):  
Data Processing ◽  
High Speed ◽  
Variable Temperature ◽  
Dilute Nitride ◽  
Temperature Conditions ◽  
High Speed Data

Recent Progress in High-Speed All-Optical Wavelength Converters Based on SOAs

2011 ◽  
Vol 4 (2) ◽  
pp. 133-138
Author(s):  
Gang Wang ◽  
Qiwei Weng ◽  
Xuelin Yang ◽  
Weisheng Hu
Keyword(s):  
High Speed ◽  
Recent Progress ◽  
Wavelength Converters ◽  
Optical Wavelength ◽  
All Optical
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