Recent progress on high-speed separated base flows

Author(s):  
J Dutton ◽  
J Herrin ◽  
M Molezzi ◽  
T Mathur ◽  
K Smith
2016 ◽  
Vol 14 (12) ◽  
pp. 120003-120007 ◽  
Author(s):  
Shaohua Yu Shaohua Yu ◽  
Ming Luo Ming Luo ◽  
Xiang Li Xiang Li ◽  
Rong Hu Rong Hu ◽  
Ying Qiu Ying Qiu ◽  
...  

2019 ◽  
Vol E102.C (4) ◽  
pp. 324-332
Author(s):  
Hiroshi ARUGA ◽  
Keita MOCHIZUKI ◽  
Tadashi MURAO ◽  
Mizuki SHIRAO

Author(s):  
Satoshi Yoshima ◽  
Masaki Noda ◽  
Eitetsu Igawa ◽  
Satoshi Shirai ◽  
Kenji Ishii ◽  
...  

2011 ◽  
Vol 4 (2) ◽  
pp. 133-138
Author(s):  
Gang Wang ◽  
Qiwei Weng ◽  
Xuelin Yang ◽  
Weisheng Hu

Author(s):  
Ming-Tuo Zhou ◽  
Peng-Yong Kong

WiMAX based on IEEE std 802.16 is believed one of the important technologies of 4G. It aims to provide high-speed access over distance of several to tens kilometers. In IEEE std 802.16-2004, WiMAX defines an optional mesh mode, with which multi-hop, multi-route, self-organizing and self-healing communications can be achieved in metropolitan-level areas. This chapter presents medium access control (MAC) protocol of WiMAX mesh mode, on frame structure, network configuration, network entry, and scheduling algorithms. It also summaries the most recent progress on data slots resource scheduling and allocation algorithms. Finally, an application example of using WiMAX mesh network for high-speed and low-cost maritime communications is also presented in this chapter.


1997 ◽  
Vol 484 ◽  
Author(s):  
R. M. Biefeld ◽  
A. A. Allerman ◽  
S. R. Kurtz ◽  
K. C. Baucom

AbstractWe report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (> 650 mW/facet) at 80 K and 3.8 μm. A multi-stage 3.8–3.9 μm laser structure operated up to T=170 K. At 80 K, peak power > 100 mW and a high slope-efficiency were observed in gain guided lasers.


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