Nano-Mechanical Testing of Free-Standing Mono-Crystalline Silicon Beams

2011 ◽  
Keyword(s):  
Mechanical Testing ◽  
Crystalline Silicon ◽  
Free Standing ◽  
Silicon Beams

scholarly journals Индий-индуцированная кристаллизация тонких пленок аморфного субоксида кремния

2020 ◽  
Vol 46 (12) ◽  
pp. 14
Author(s):  
А.О. Замчий ◽  
Е.А. Баранов ◽  
И.Е. Меркулова ◽  
Н.А. Лунев ◽  
В.А. Володин ◽  
...  
Keyword(s):  
Crystallization Temperature ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Stoichiometric Coefficient ◽  
Free Standing ◽  
Solid Phase Crystallization ◽  
Silicon Suboxide ◽  
Induced Crystallization

A novel fabrication method of polycrystalline silicon by indium-induced crystallization (InIC) of amorphous silicon suboxide thin films with a stoichiometric coefficient of 0.5 (a-SiO0.5) is proposed. It was shown that the use of indium in the annealing process of a SiO0.5 allowed to decrease the crystallization temperature to 600°С which was significantly lower than the solid-phase crystallization temperature of the material - 850°С. As a result of the high-vacuum InIC of a-SiO0.5, the formation of free-standing micron-sized crystalline silicon particles took place.

scholarly journals Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0%

Nano Energy ◽  
2020 ◽  
Vol 70 ◽  
pp. 104466 ◽  
Author(s):  
Muyu Xue ◽  
Koosha Nassiri Nazif ◽  
Zheng Lyu ◽  
Jialin Jiang ◽  
Ching-Ying Lu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Crystalline Silicon Solar Cell ◽  
Free Standing

Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures

1990 ◽  
Vol 5 (11) ◽  
pp. 2497-2501 ◽  
Author(s):  
S. A. Grot ◽  
S. Lee ◽  
G.Sh. Gildenblat ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Schottky Diodes ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Silicon Substrates ◽  
Metal Contacts ◽  
Free Standing ◽  
Internal Photoemission ◽  
Silicon Structures

Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface.

DETERMINATION OF THE COMPLEX REFRACTIVE INDEX OF POROUS SILICON LAYERS ON CRYSTALLINE SILICON SUBSTRATES

2010 ◽  
Vol 24 (24) ◽  
pp. 4835-4850 ◽  
Author(s):  
M. C. ARENAS ◽  
HAILIN HU ◽  
R. NAVA ◽  
J. A. DEL RÍO
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Porous Silicon ◽  
Extinction Coefficient ◽  
Near Infrared ◽  
Crystalline Silicon ◽  
Complex Refractive Index ◽  
Si Substrate ◽  
Free Standing ◽  
Analytical Relations

In this work, we show an algorithm to calculate the complex refractive index of porous silicon (PS) on its crystalline silicon (c-Si) substrate in UV-NIR range by means of the reflectance spectra only. The algorithm is based on the analytical relations established by Heavens to obtain both complex refractive index and thickness of an absorbing thin film on an absorbing substrate. Based on this model, some simplification is introduced at different wavelengths. We start with the NIR range (1000–2500 nm), where the c-Si substrate has a low extinction coefficient. Then, we continue with the near infrared to the optical range (300–1000 nm), where PS has a strong extinction coefficient and dispersion. The calculated n and k values are in agreement with those reported in the literature obtained from separated measurements of a free standing PS film. We consider that the algorithm can be applied to any thin film on a substrate with similar optical properties.

High-temperature bulge-test setup for mechanical testing of free-standing thin films

2003 ◽  
Vol 74 (3) ◽  
pp. 1383-1385 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Mechanical Testing ◽  
Bulge Test ◽  
Free Standing ◽  
Test Setup

Infrared optical properties of CVD diamond films

1990 ◽  
Vol 5 (11) ◽  
pp. 2345-2350 ◽  
Author(s):  
X. H. Wang ◽  
L. Pilione ◽  
W. Zhu ◽  
W. Yarbrough ◽  
W. Drawl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Optical Absorption Coefficient ◽  
Wave Number ◽  
Silicon Substrates ◽  
Free Standing ◽  
Infrared Optical Properties

Diamond films of 15–20 μm thicknesses were prepared by microwave plasma enhanced chemical vapor deposition onto crystalline silicon substrates. The growth surfaces of the films were rough with polycrystalline crystallographic habits, while the substrate sides of these films were smooth and featureless as viewed by optical microscopy. A heated cast iron scaife was used to polish the rough growth surfaces, and free-standing films were removed from the silicon substrates by dissolving the silicon in an aqueous HF. Both infrared optical transmission and reflection spectra were measured over the range of 600–4000 cm−1. For polished films, near 70% transmittance was obtained over the whole range, while the transmittance for nonpolished films was much lower and varied strongly with the wave number. Absorptions due to carbon-hydrogen stretching bands as well as a silicon carbide phase were observed in the transmission spectra. The optical absorption coefficient and the refractive index were found to vary from as high as 150 to as low as 7 cm−1 and 2.41 to 2.49, respectively (depending on the film quality and the wave number). A weak signature of the two-phonon absorption band of diamond was observed. The relationship between deposition conditions and infrared optical properties of diamond films before as well as after polishing is discussed.

scholarly journals Over 65% sunlight absorption in a 1 μm Si slab with hyperuniform texture

2020 ◽  
Author(s):  
Nasim Tavakoli ◽  
Richard Spalding ◽  
Pepijn Koppejan ◽  
Georgio Gkantzounis ◽  
Chenglong Wang ◽  
...  
Keyword(s):  
Light Absorption ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Surface Texturing ◽  
Free Standing ◽  
New Family ◽  
Photovoltaic Efficiency ◽  
Optical Modes ◽  
Poor Absorption ◽  
Near Future

Abstract Thin, flexible and invisible solar cells will be an ubiquitous technology in the near future. Ultrathin crystalline silicon (c-Si) cells capitalise on the success of bulk silicon cells while being light-weight and mechanically flexible, but suffer from poor absorption and efficiency. Here we present a new family of surface texturing, based on correlated disordered hyperuniform patterns, capable of efficiently coupling the incident spectrum into the silicon slab optical modes. We experimentally demonstrate 66.5% solar light absorption in free-standing 1 µm c-Si layers by hyperuniform nanostructuring. The absorption equivalent photocurrent derived from our measurements is 26.3 mA/cm2, which is far above the highest found in literature for Si of similar thickness. Considering state-of-the-art Si PV technologies, the enhanced light trapping translates to a record efficiency above 15%. The light absorption can potentially be increased up to 33.8 mA/cm2 by incorporating a back-reflector and improved anti-reflection, for which we estimate a photovoltaic efficiency above 21% for 1 µm thick Si cells.

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