Wet Chemical Etching Behavior Investigation for CMOS Shallow Trench Isolation (STI) Shape Control

ABSTRACTWe report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

Download Full-text

Wet Chemical Etching Behavior of Ga(Al)As and In(Ga)P(As) Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.2693 ◽

1991 ◽

Vol 30 (Part 1, No. 11A) ◽

pp. 2693-2699 ◽

Cited By ~ 6

Author(s):

Gerhard Franz ◽

Charlotte Hoyler ◽

Dagmar Sacher

Keyword(s):

Chemical Etching ◽

Wet Chemical ◽

Etching Behavior ◽

Wet Chemical Etching

Download Full-text

Wet chemical etching behavior of β-Ga2O3single crystal

physica status solidi (c) ◽

10.1002/pssc.200779223 ◽

2008 ◽

Vol 5 (9) ◽

pp. 3116-3118 ◽

Cited By ~ 45

Author(s):

Shigeo Ohira ◽

Naoki Arai

Keyword(s):

Chemical Etching ◽

Wet Chemical ◽

Etching Behavior ◽

Wet Chemical Etching

Download Full-text

Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films

CrystEngComm ◽

10.1039/c7ce02121f ◽

2018 ◽

Vol 20 (9) ◽

pp. 1198-1204 ◽

Cited By ~ 3

Author(s):

Xiaochan Li ◽

Wenliang Wang ◽

Yulin Zheng ◽

Yuan Li ◽

Liegen Huang ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Chemical Etching ◽

Pulsed Laser ◽

Epitaxial Films ◽

Laser Deposition ◽

Anisotropic Surface ◽

Wet Chemical ◽

Etching Behavior ◽

Wet Chemical Etching ◽

Micro Structures

The anisotropic surface etching behavior of nonpolar a-plane GaN (112̄0) epitaxial films, grown by pulsed laser deposition, was investigated experimentally by wet chemical etching.

Download Full-text

Decapsulation Techniques for Cu Wire Bonding Package

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0217 ◽

2009 ◽

Author(s):

Dongmei Meng ◽

Joe Rupley ◽

Chris McMahon

Keyword(s):

Laser Ablation ◽

Thin Layer ◽

Chemical Etching ◽

Wire Bonding ◽

Methods And Techniques ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Reliability Issue ◽

Etch Time ◽

Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

Download Full-text