(Invited) Reliability Considerations for Al-Rich Aluminum Gallium Nitride Power Switching Transistors

2019 ◽  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Gallium Nitride ◽  
Power Switching

scholarly journals Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

2021 ◽  
Vol 11 (3) ◽  
pp. 33
Author(s):  
Mahesh B. Manandhar ◽  
Mohammad A. Matin
Keyword(s):  
Gallium Nitride ◽  
Aluminum Gallium Nitride ◽  
Electrical Performance ◽  
Operating Voltage ◽  
Intrinsic Properties ◽  
Power Devices ◽  
Power Switching ◽  
Power Modules ◽  
Wideband Gap ◽  
Made In

The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material with intrinsic properties best suited for high power switching applications. This paper simulates and compares the thermal and electrical performance of AlGaN and Silicon (Si) MOSFETs, modeled in COMSOL Multiphysics. Comparisons between similar AlGaN/GaN and Si power modules are made in terms of heatsink requirements. The temperatures for the same operating voltage are found to be significantly lower for the AlGaN MOSFETs structures, compared to Si. The heatsink size for the AlGaN/GaN is found to be smaller compared to Si for the power modules.

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