Ti0.5Al0.5O-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors by Using Non-Vacuum Ultrasonic Spray Pyrolysis Deposition
2016 ◽
Vol 5
(12)
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pp. Q284-Q288
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2020 ◽
Vol 8
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pp. 9-14
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2018 ◽
Vol 33
(6)
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pp. 065004
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2005 ◽
Vol 2
(7)
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pp. 2651-2654
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2001 ◽
Vol 188
(1)
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pp. 219-222
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