InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator
2020 ◽
Vol 8
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pp. 9-14
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2005 ◽
Vol 2
(7)
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pp. 2651-2654
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2001 ◽
Vol 188
(1)
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pp. 219-222
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2017 ◽
Vol 32
(4)
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pp. 045018
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2016 ◽
Vol 5
(12)
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pp. Q284-Q288
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