scholarly journals Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells

2010 ◽  
Vol 2010 ◽  
pp. 1-11 ◽  
Author(s):  
Ryosuke Motoyoshi ◽  
Takeo Oku ◽  
Atsushi Suzuki ◽  
Kenji Kikuchi ◽  
Shiomi Kikuchi ◽  
...  

Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS-) based solar cells with titanium dioxide (TiO2) were produced on F-dopedSnO2(FTO). A device based on an FTO/CIS/TiO2structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO-) and cuprous oxide- (Cu2O-) based solar cells with fullerene (C60) were also fabricated on FTO and indium tin oxide (ITO). The microstructure and cell performance of the CuO/C60heterojunction and theCu2O:C60bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60and ITO/Cu2O:C60structures provided short-circuit current density of 0.015 mAcm−2and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy.

Author(s):  
Nur Shakina Mohd Shariff ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop Mahmood

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.


2017 ◽  
Vol 17 (1) ◽  
pp. 13
Author(s):  
Shobih Shobih ◽  
Rizky Abdillah ◽  
Erlyta Septa Rosa

Hybrid polymer solar cell has privilege than its conventional structure, where it usually has structure of (ITO/PEDOT:PSS/Active Layer/Al). In humid environment the PEDOT:PSS will absorb water and hence can easily etch the ITO. Therefore it is necessary to use an alternative method to avoid this drawback and obtain more stable polymer solar cells, namely by using hybrid polymer solar cells structure with an inverted device architecture from the conventional, by reversing the nature of charge collection. In this paper we report the results of the fabrication of inverted bulk heterojunction polymer solar cells based on P3HT:PCBM as active layer, utilizing ZnO interlayer as buffer layer between the ITO and active layer with a stacked structure of ITO/ZnO/P3HT:PCBM/PEDOT:PSS/Ag. The ZnO interlayer is formed through short route, i.e. by dissolving ZnO nanoparticles powder in chloroform-methanol solvent blend rather than by sol-gel process. Based on the measurement results on electrical characteristics of inverted polymer solar cells under 500 W/m2 illumination and AM 1.5 direct filter at room temperature, cell with annealing process of active layer at 110 °C for 10 minutes results in higher cell performance than without annealing, with an open-circuit voltage of 0.21 volt, a short-circuit current density of 1.33 mA/cm2 , a fill factor of 43.1%, and a power conversion efficiency of 0.22%. The low cell’s performance is caused by very rough surface of ZnO interlayer.


2008 ◽  
Vol 1091 ◽  
Author(s):  
Osamu Yoshikawa ◽  
Taro Sonobe ◽  
Takashi Sagawa ◽  
Susumu Yoshikawa

AbstractThe performance of the devices of bulk heterojunction polymer-based solar cells were investigated by using poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as light absorption (viz. active) layer, with TiOx as interlayer as follows: ITO/PEDOT:PSS/P3HT-PCBM/TiOx/Al [1] through the treatment of microwave irradiation (single mode of 2.45 GHz, 800 W for 1, 2.5, or 5 min). Such treatments enabled to increase the short-circuit current density Jsc (from 4.53 mA cm−2 to 7.27 mA cm−2) and fill factor FF (from 0.41 to 0.66) of the cell, though the open circuit voltage Voc was decreased (from 0.61 V to 0.57 V) along the irradiation. Absorption spectra of P3HT-PCBM blended film before and after the microwave treatment were observed. Shoulders at 550 nm and 600 nm appeared after the irradiation. This result implies that the microcrystallization of P3HT was slightly promoted through the microwave treatment.


Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.


Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4268
Author(s):  
Jessica de Wild ◽  
Gizem Birant ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Jef Poortmans ◽  
...  

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.


2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Xiaojun Zhu ◽  
Xiaoping Zou ◽  
Hongquan Zhou

We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.


Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 450 ◽  
Author(s):  
Miron Krassas ◽  
Christos Polyzoidis ◽  
Pavlos Tzourmpakis ◽  
Dimitriοs M. Kosmidis ◽  
George Viskadouros ◽  
...  

A conjugated, ladder-type multi-fused ring 4,7-dithienbenzothiadiazole:thiophene derivative, named as compound ‘T’, was for the first time incorporated, within the PTB7:PC71BM photoactive layer for inverted ternary organic solar cells (TOSCs) realization. The effective energy level offset caused by compound T between the polymeric donor and fullerene acceptor materials, as well as its resulting potential as electron cascade material contribute to an enhanced exciton dissociation, electron transfer facilitator and thus improved overall photovoltaic performance. The engineering optimization of the inverted TOSC, ITO/PFN/PTB7:Compound T(5% v/v):PC71BM/MoO3/Al, resulted in an overall power conversion efficiency (PCE) of 8.34%, with a short-circuit current density (Jsc) of 16.75 mA cm−2, open-circuit voltage (Voc) of 0.74 V and a fill factor (FF) of 68.1%, under AM1.5G illumination. This photovoltaic performance was improved by approximately 12% with respect to the control binary device.


2011 ◽  
Vol 378-379 ◽  
pp. 601-605 ◽  
Author(s):  
Saleh N. Alamri ◽  
M. S. Benghanem ◽  
A. A. Joraid

This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.


2011 ◽  
Vol 10 (04n05) ◽  
pp. 803-807
Author(s):  
T. S. KRISHNAN ◽  
S. SUNDAR KUMAR IYER

This work addresses the shelf life characteristics of P3HT: PCBM blend based organic solar cells (OSC) fabricated with Ca–Al and LiF–Al cathodes. Some of these devices are encapsulated in nitrogen ambient and some in room ambient. Device electrical characteristics are studied under both dark and light. In the analysis under dark ambient conditions, the degradation in peak dark current is monitored over time (in days) and an empirical model is postulated for the degradation based on statistical curve fitting techniques. In the analysis under light, degradation of parameters such as fill factor (FF), open circuit voltage (V oc ) and short circuit current density (J sc ) is monitored over time in these devices (for different cathodes and different ambients) and the results are analyzed and compared. Also, accelerated stress tests are conducted wherein the devices are subjected to continuous illumination for a period of 1.5 h under two different intensities (0.76 sun and 1 sun) and again, the results are analyzed and compared. A model is fitted to the observed degradation in normalized J sc and the degradation constants (k deg ) are obtained. It is seen that the devices fabricated with cathode as LiF–Al and being encapsulated in nitrogen ambient provide the best performance over time.


2004 ◽  
Vol 11 (06) ◽  
pp. 569-575 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO

The phosphorus doped n -type ( n - C : P ) carbon films and fabrication of n - C : P / p - Si heterojunction solid-state solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target have been studied. The P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.22–1.77 atomic percentages. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage ( V oc ) and short circuit current density ( J sc ) for the cells are observed to vary from 215 to 265 mV and from 7.5 to 10.5 mA/cm2, respectively. The cell fabricated using the target with the amount of P by 7 weight percentages (Pwt%) shows the highest energy conversion efficiency, η=1.14% and fill factor, FF =41%. In this paper, the dependence of P content on the electrical and optical properties of the deposited n - C : P films and the photovoltaic characteristic of the n - C : P / p - Si cells are reported.


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