scholarly journals Hydrogenic-Donor Impurity Binding Energy Dependence of the Electric Field in GaAs/AlxGa1−xAs Quantum Rings

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Guangxin Wang ◽  
Xiuzhi Duan ◽  
Wei Chen
Keyword(s):  
Wave Function ◽  
Binding Energy ◽  
Electric Field ◽  
Applied Electric Field ◽  
Donor Impurity ◽  
Electronic Wave ◽  
Hydrogenic Donor Impurity ◽  
Hydrogenic Donor ◽  
Electronic Wave Function ◽  
Radial Thickness

Using a variational method with two-parameter trial wave function and the effective mass approximation, the binding energy of a donor impurity in GaAs/AlxGa1−xAs cylindrical quantum ring (QR) subjected to an external field is calculated. It is shown that the donor impurity binding energy is highly dependent on the QR structure parameters (radial thickness and height), impurity position, and external electric field. The binding energy increases inchmeal as the QR parameters (radial thickness and height) decrease until a maximum value for a central impurity and then begins to drop quickly. The applied electric field can significantly modify the spread of electronic wave function in the QR and shift electronic wave function from the donor position and then leads to binding energy changes. In addition, results for the binding energies of a hydrogenic donor impurity as functions of the impurity position and applied electric field are also presented.

External electric field effect on the binding energy of a hydrogenic donor impurity in InGaAsP/InP concentric double quantum rings

2018 ◽  
Vol 32 (11) ◽  
pp. 1850138 ◽  
Author(s):  
Min Hu ◽  
Hailong Wang ◽  
Qian Gong ◽  
Shumin Wang
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Donor Impurity ◽  
Quantum Rings ◽  
Hydrogenic Donor Impurity ◽  
Hydrogenic Donor ◽  
Peak Value

Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at z[Formula: see text] decreases while that located at z[Formula: see text] increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.

BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1753-1756 ◽  
Author(s):  
A. MONTES ◽  
A. L. MORALES ◽  
C. A. DUQUE
Keyword(s):  
Wave Function ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Donor Impurity ◽  
External Hydrostatic Pressure ◽  
Mass Approximation

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities in GaAs–Ga 1 - x Al x As quantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

EXTERNAL ELECTRIC FIELD EFFECT ON THE HYDROGENIC DONOR IMPURITY IN ZINC-BLENDE GaN/AlGaN CYLINDRICAL QUANTUM WELL WIRE

2010 ◽  
Vol 24 (23) ◽  
pp. 2413-2421 ◽  
Author(s):  
LIMING JIANG ◽  
JIANMENG SUN
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Stark Shift ◽  
Donor Impurity ◽  
Zinc Blende ◽  
Hydrogenic Donor Impurity ◽  
Donor Binding Energy ◽  
Quantum Well Wire ◽  
Hydrogenic Donor

The binding energy of a hydrogenic donor impurity in a zinc-blende GaN / AlGaN cylindrical quantum well wire (QWW) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on the impurity position, the radius of the wire and the external electric field. In addition, Stark shift dependence on the radius of the QWW and the external electric field is also calculated. The donor binding energy has a maximum when the impurity is located at the center of the QWW. The donor binding energy decreases with the increase of the external electric field, but stark shift increases with the increase of the external electric field or the radius of the QWW.

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