scholarly journals Electromechanical Response of Conductive Porous Structure

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Hye-Mi So ◽  
Cheolmin Park ◽  
Won Seok Chang
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Pressure Sensors ◽  
External Pressure ◽  
Electrical Characteristics ◽  
Porous Structures ◽  
Single Walled Carbon Nanotube ◽  
Consistent Change ◽  
Sensitive Pressure

Porous conductors with large surface-volume ratios have been applied to a variety of fields, including absorbents, flexible heaters, and electrodes for supercapacitors. In this study, we implemented sensitive pressure sensors using the mechanical and electrical characteristics of conductive porous structures manufactured by immersing sponges into a carbon nanotube solution and then measured the change in resistance. When pressure was applied to conductive sponges, carbon nanotubes were attached to each other and the resistance was reduced by up to 20%. The carbon nanotube sponges, which were soft and had superior elasticity, were quickly stabilized without any changes taking place in their shape, and they showed consistent change in resistance during experiments of repetitive pressure. The pressure devices based on conductive porous sponges were connected to single-walled carbon nanotube field effect transistors (SWCNT-FETs) and changes in their characteristics were investigated according to external pressure.

Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors

2015 ◽  
Vol 17 (10) ◽  
pp. 6874-6880 ◽  
Author(s):  
Ho-Kyun Jang ◽  
Jun Eon Jin ◽  
Jun Hee Choi ◽  
Pil-Soo Kang ◽  
Do-Hyun Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Network Density ◽  
Electrical Characteristics ◽  
Single Walled Carbon Nanotube ◽  
Electrical Percolation ◽  
Single Walled Carbon ◽  
Percolation Thresholds ◽  
Carbon Nanotube Networks

We related the network density of semiconducting single-walled carbon nanotube networks at the percolation threshold to their electrical characteristics.

Y-Contacted High-Performance n-Type Single-Walled Carbon Nanotube Field-Effect Transistors: Scaling and Comparison with Sc-Contacted Devices

Nano Letters ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 4209-4214 ◽  
Author(s):  
Li Ding ◽  
Sheng Wang ◽  
Zhiyong Zhang ◽  
Qingsheng Zeng ◽  
Zhenxing Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

Sign in / Sign up

Export Citation Format

Share Document