scholarly journals A Doherty Power Amplifier with Large Back-Off Power Range Using Integrated Enhancing Reactance

2018 ◽  
Vol 2018 ◽  
pp. 1-8
Author(s):  
Wa Kong ◽  
Jing Xia ◽  
Fan Meng ◽  
Chao Yu ◽  
Lixia Yang ◽  
...  
Keyword(s):  
Low Power ◽  
Power Amplifier ◽  
Impedance Matching ◽  
Dual Band ◽  
Matching Networks ◽  
Measurement Results ◽  
Linearity Improvement ◽  
Saturated Output Power ◽  
Doherty Power Amplifier ◽  
Power Region

A symmetric Doherty power amplifier (DPA) based on integrated enhancing reactance (IER) was proposed for large back-off applications. The IER was generated using the peaking amplifier with the help of a desired impedance transformation in the low-power region to enhance the back-off efficiency of the carrier amplifier. To convert the impedances properly, both in the low-power region and at saturation, a two-impedance matching method was employed to design the output matching networks. For verification, a symmetric DPA with large back-off power range over 2.2–2.5 GHz was designed and fabricated. Measurement results show that the designed DPA has the 9 dB back-off efficiency of higher than 45%, while the saturated output power is higher than 44 dBm over the whole operation bandwidth. When driven by a 20 MHz LTE signal, the DPA can achieve good average efficiency of around 50% with adjacent channel leakage ratio of about –50 dBc after linearization over the frequency band of interest. The linearity improvement of the DPA for multistandard wireless communication system was also verified with a dual-band modulated signal.

A Novel Dual-Band Concurrent Asymmetric Doherty Power Amplifier for Wireless Communications

2019 ◽  
Vol 28 (14) ◽  
pp. 1950235 ◽  
Author(s):  
Shaban Rezaei Borjlu ◽  
Massoud Dousti
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Mobile Communications ◽  
Bandpass Filter ◽  
Dual Band ◽  
Power Gain ◽  
Average Output ◽  
Measurement Results ◽  
Saturated Output Power ◽  
Doherty Power Amplifier

In this paper, a different dual-band asymmetric Doherty power amplifier (ADPA) with a novel dual-band bandpass filter (DBBPF) with quad-section stepped impedance resonators (SIRs) is presented. This specific DBBPF rejects the annoying frequencies of the second and third harmonics in the dual-band and contributes considerably to performance improvement of ADPA. This structure is confirmed with the design, simulation, implementation and testing of a 10 W GaN-based ADPA for global system for mobile communications (GSM) and worldwide interoperability for microwave access (WiMAX) applications at 1.84 and 3.5[Formula: see text]GHz, respectively. In the measurement results, the ADPA defines a drain efficiency (DE) of 63.7% with an output power of 35[Formula: see text]dBm and power gain is 14.2[Formula: see text]dB, and a DE of 47.5% with an output power of 34.5[Formula: see text]dBm and power gain is 10.4[Formula: see text]dB at the 9[Formula: see text]dB output power back-off (OBO) from the saturated output power in the two frequency bands. Linearity effects, applying 10[Formula: see text]MHz 16 QAM signal and a 5[Formula: see text]MHz WiMAX signal, display an adjacent channel leakage ratio of [Formula: see text] and [Formula: see text][Formula: see text]dBc with the average output power of 36.8/36[Formula: see text]dBm at 1.84/3.5[Formula: see text]GHz, respectively.

scholarly journals Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer

2017 ◽  
Vol 9 (6) ◽  
pp. 1261-1269 ◽  
Author(s):  
Mhd Tareq Arnous ◽  
Zihui Zhang ◽  
Felix Rautschke ◽  
Georg Boeck
Keyword(s):  
Power Amplifier ◽  
Insertion Loss ◽  
High Power ◽  
Return Loss ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Matching Networks ◽  
Measurement Results ◽  
Saturated Output Power

In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.

scholarly journals Design of a Wideband Doherty Power Amplifier with High Efficiency for 5G Application

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 873
Author(s):  
Abbas Nasri ◽  
Motahhareh Estebsari ◽  
Siroos Toofan ◽  
Anna Piacibello ◽  
Marco Pirola ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Efficiency ◽  
Matching Network ◽  
Class Ab ◽  
Measurement Results ◽  
Saturated Output Power ◽  
Doherty Power Amplifier ◽  
Good Trade ◽  
The Impact

This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis of the output matching network is presented, focusing on the impact of the non-ideally infinite output impedance of the auxiliary amplifier in back off, due to the device’s parasitic elements. By properly accounting for this effect, the designed output matching network was able to follow the desired impedance trajectories across the 2.8 GHz to 3.6 GHz range (fractional bandwidth = 25%), with a good trade-off between efficiency and bandwidth. The Doherty power amplifier was designed with two 10 W packaged GaN HEMTs. The measurement results showed that it provided 43 dBm to 44.2 dBm saturated output power and 8 dB to 13.5 dB linear power gain over the entire band. The achieved drain efficiency was between 62% and 76.5% at saturation and between 44% and 56% at 6 dB of output power back-off.

scholarly journals A Power Amplifier with Large High-Efficiency Range for 5G Communication

Sensors ◽  
2020 ◽  
Vol 20 (19) ◽  
pp. 5581
Author(s):  
Zhiwei Zhang ◽  
Zhiqun Cheng ◽  
Guohua Liu
Keyword(s):  
Output Power ◽  
Design Process ◽  
Power Amplifier ◽  
High Efficiency ◽  
New Method ◽  
Saturated Output Power ◽  
Doherty Power Amplifier ◽  
5G Communication

This paper presents a new method to design a Doherty power amplifier (DPA) with a large, high-efficiency range for 5G communication. This is through analyzing the drain-to-source capacitance (CDS) of DPAs, and adopting appropriate impedance of the peak device. A closed design process is proposed, to design the extended efficiency range DPA based on derived theories. For validation, a DPA with large efficiency range was designed and fabricated by using two equal devices. The measured results showed that the saturated output power was between 43.4 dBm and 43.7 dBm in the target band. Around 70% saturated drain efficiency is obtained with a gain of greater than 11 dB. Moreover, the obtained drain efficiency is larger than 50% at the 10 dB power back-off, when operating at 3.5 GHz. These superior performances illustrate that the implemented DPA can be applied well in 5G communication.

A Compact Dual-Band Digital Polar Doherty Power Amplifier Using Parallel-Combining Transformer

2019 ◽  
Vol 54 (6) ◽  
pp. 1575-1585 ◽  
Author(s):  
Yun Yin ◽  
Liang Xiong ◽  
Yiting Zhu ◽  
Bowen Chen ◽  
Hao Min ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Dual Band ◽  
Doherty Power Amplifier

scholarly journals Efficient technique for ultra broadband, linear power amplifier design

2012 ◽  
Vol 4 (6) ◽  
pp. 559-567 ◽  
Author(s):  
Ahmed Sayed ◽  
Sebastian Preis ◽  
Georg Boeck
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Impedance Matching ◽  
Network Synthesis ◽  
Circuit Performance ◽  
Power Added Efficiency ◽  
Starting Point ◽  
Saturated Output Power ◽  
Linear Power Amplifier ◽  
Amplifier Design

In this paper, a 10 W ultra-broadband GaN power amplifier (PA) is designed, fabricated, and tested. The suggested design technique provides a more accurate starting point for matching network synthesis and better prediction of achievable circuit performance. A negative-image model was used to fit the extracted optimum impedances based on source-/load-pull technique and multi-section impedance matching networks were designed. The implemented amplifier presents an excellent broadband performance, resulting in a gain of 8.5 ± 0.5 dB, saturated output power of ≥10 W, and power added efficiency (PAE) of ≥23% over the whole bandwidth. The linearity performance has also been characterized. An output third-order intercept point (OIP3) of ≥45 dBm was extracted based on a two-tone measurement technique in the operating bandwidth with different frequency spacing values. The memory effect based on AM/AM and AM/PM conversions was also characterized using a modulated WiMAX signal of 10 MHz bandwidth at 5.8 GHz. Furthermore, a broadband Wilkinson combiner was designed for the same bandwidth with very low loss to extend the overall output power. Excellent agreement between simulated and measured PA performances was also achieved.

Design of a Concurrent Dual-Band 1.8–2.4-GHz GaN-HEMT Doherty Power Amplifier

2012 ◽  
Vol 60 (6) ◽  
pp. 1840-1849 ◽  
Author(s):  
Paul Saad ◽  
Paolo Colantonio ◽  
Luca Piazzon ◽  
Franco Giannini ◽  
Kristoffer Andersson ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Dual Band ◽  
Gan Hemt ◽  
Doherty Power Amplifier
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