Fabrication of a Piezoresistive Barometric Pressure Sensor by a Silicon-on-Nothing Technology
Keyword(s):
This paper presents a piezoresistive barometric pressure sensor fabricated by using a Silicon-on-Nothing (SON) technology. Array of silicon trenches were annealed in hydrogen environment to form continuing crystalline silicon membrane over a vacuum cavity. Epitaxial growth on the silicon membrane is then completed for the desired thickness. All processes are CMOS compatible and performed on the front side of the silicon wafer. The piezoresistive barometric pressure sensor has been demonstrated with pressure hysteresis as low as 0.007%.
2010 ◽
Vol 130
(5)
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pp. 170-175
2007 ◽
Vol 46
(1)
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pp. 21-23
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Keyword(s):
Research on surface nano-texturation and wet-chemical passivation of multi-crystalline silicon wafer
2017 ◽
Vol 28
(24)
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pp. 18825-18834
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2020 ◽
Vol 37
(2)
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pp. 024203
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