scholarly journals A New Analytical Expression for the T.C.R. of Thin Monocrystalline Metal Films

1979 ◽  
Vol 5 (4) ◽  
pp. 209-213 ◽  
Author(s):  
C. R. Tellier
Keyword(s):  
Electrical Conductivity ◽  
Relaxation Time ◽  
Reflection Coefficient ◽  
Grain Boundary ◽  
Metal Film ◽  
Approximate Equation ◽  
Metal Films ◽  
Exact Equation ◽  
Temperature Coefficient Of Resistivity ◽  
Comparison Of The Results

The analysis of electrical conductivity of continuous thin monocrystalline metal film has been treated by assuming that the scattering from other sources than grain-boundaries can be described by an effective relaxation time. This relaxation time method is applied to the temperature coefficient of resistivity and leads to an analytical approximate equation in terms of the grain-boundary reflection coefficientrand the reduced thicknessk.Comparison of the results with those deduced from the exact equation (derived from the Mayadas and Shatzkes theory) shows that they deviate by less than 5% in largek–,p–, andr– ranges.

scholarly journals Size and Grain-Boundary Effects in the Electrical Conductivity of Thin Monocrystalline Films

1978 ◽  
Vol 5 (2) ◽  
pp. 127-131 ◽  
Author(s):  
C. R. Tellier
Keyword(s):  
Electrical Conductivity ◽  
Relaxation Time ◽  
Boltzmann Equation ◽  
Reflection Coefficient ◽  
Grain Boundary ◽  
Boundary Effects ◽  
Boundary Scattering ◽  
Single Relaxation Time ◽  
Monocrystalline Film ◽  
Film Conductivity

By assuming that the scattering processes from other sources than grain-boundaries can be described by a single relaxation timeτ∗and then by solving a Boltzmann equation in which grain-boundary scattering is accounted for, we have obtained an analytical expression for the thin monocrystalline film conductivity in terms of the reduced thicknesskand the grain-boundary reflection coefficientr. Numerical tables are given to show the agreement of the above expression with the Mayadas-Shatzkes expression.

scholarly journals Response to Comments on Paper on Grain Boundary Scattering Model for Metals

1981 ◽  
Vol 9 (2) ◽  
pp. 105-109 ◽  
Author(s):  
F. Warkusz
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Electron Scattering ◽  
Metal Film ◽  
External Surface ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Surface Electron ◽  
Polycrystalline Metal ◽  
Grain Boundary Scattering

The electrical conductivity of a polycrystalline metal film has been studied for a model in which the background scattering and grain boundary scattering are independent. The external surface electron scattering has been analyzed by assuming it to be independent of background scattering and thus the external surface scattering can be conveniently described with the Cottey method.

Influence of interdiffusion on the electrical conductivity of multilayered metal films

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 73-86
Author(s):  
Leonid Dekhtyaruk
Keyword(s):  
Electrical Conductivity ◽  
Numerical Analysis ◽  
Grain Boundary ◽  
Time Dependence ◽  
Annealing Time ◽  
Boundary Diffusion ◽  
Metal Films ◽  
Diffusion Annealing ◽  
Classical Approach ◽  
Polycrystalline Metal

AbstractThe annealing-time dependence of the electrical conductivity of multilayered single-crystal and polycrystalline metal films has been analyzed theoretically within the frame of the semi-classical approach. It is demonstrated that changes in the electrical conductivity which are caused by the diffusion annealing allow for investigating the processes of the bulk and grain-boundary diffusion, and for estimating the coefficients of the diffusion. The electrical conductivity was calculated and the numerical analysis of the diffusion-annealing time dependence was performed at various parameters.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Investigating the dielectric properties and low-frequency relaxation process of TlGaSe2 crystals

2017 ◽  
Vol 31 (12) ◽  
pp. 1750134 ◽  
Author(s):  
Oktay Samadov ◽  
Oktay Alakbarov ◽  
Arzu Najafov ◽  
Samir Samadov ◽  
Nizami Mehdiyev ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Relaxation Time ◽  
Constant Electric Field ◽  
Low Frequency ◽  
Constant Field ◽  
Impedance Spectra ◽  
Ionic Contribution ◽  
Frequency Relaxation ◽  
Average Relaxation Time ◽  
Diagram Analysis

The dielectric and impedance spectra of TlGaSe2 crystals have been studied at temperatures in the 100–500 K range in the alternating current (AC [Formula: see text]1 V). It has been shown that the conductivity of TlGaSe2 crystals is mainly an ionic characteristic at temperatures above 400 K. The well-defined peak at the frequency dependence of the imaginary part of impedance [Formula: see text] is observed in the 215–500 K temperature range. In a constant field, there occurs a significant decrease in electrical conductivity [Formula: see text] in due course. The ionic contribution to conductivity (76% at [Formula: see text]) has been estimated from a kinetic change in electrical conductivity [Formula: see text] under the influence of a constant electric field. The diagram analysis in a complex plane [Formula: see text] has been conducted by applying the method of an equivalent circuit of the substation. It has been determined that the average relaxation time of the electric module of the sample is [Formula: see text].

Grain-boundary electron scattering effect on metal film resistivity

1980 ◽  
Vol 61 (1) ◽  
pp. K21-K24 ◽  
Author(s):  
E. I. Tochitskii ◽  
N. M. Belyavskii
Keyword(s):  
Grain Boundary ◽  
Electron Scattering ◽  
Metal Film ◽  
Film Resistivity ◽  
Scattering Effect

Effect of Aging Treatment on Properties and Microstructure of an Al-7.5Zn-1.3Mg-1.4Cu-0.12Zr Alloy

2010 ◽  
Vol 638-642 ◽  
pp. 273-278 ◽  
Author(s):  
Xi Wu Li ◽  
Bai Qing Xiong ◽  
Yon Gan Zhang ◽  
Guo Jun Wang ◽  
Zhi Hui Li ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Electrical Conductivity ◽  
Grain Boundary ◽  
Response Rate ◽  
Aging Treatment ◽  
Aging Response ◽  
Peak Aging

In this study, the effect of various aging treatment (T6 and T7 treatment) on the mechanical properties, electrical conductivity and the microstructure of an Al-7.5Zn-1.3Mg-1.4Cu-0.12Zr alloy has been investigated. The results show that with elevating the aging treatment temperatures, the aging response rate is greatly accelerated. When T6 temper is performed at 140°C for 12h, as compared to peak aging for 24h at 120°C, the UTS and the corresponding Elongation values keep the same level, whereas the TYS and the electrical conductivity obviously increase by 5% and 9%, which is up to 560 MPa and 22.6 MS/m, respectively. And there are clear PFZs along the grain boundary and slightly coarser precipitates inside the grain. GPI zones, GPII zones and η' phases are major precipitates for the alloy under T6 condition. When T7 temper is performed on the alloy, the main precipitates are GPII zones, η′ and η phases. The coarser precipitates inside the grain and discontinuous grain boundary precipitates are favorable to electrical conductivity, which decrease the strength of 5~17% compared to T6 treatment. After T76 treatment (i.e., 110°C/6 h + 160°C/6 h), the UTS, TYS, Elongation and electrical conductivity values were 540 MPa, 510 MPa, 16.7% and 23.5 MS/m, respectively.

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