Optimizing Chemical Vapor Deposition Parameters to Attain Minimum Diameter Carbon Nano Tubes by Response Surface Methodology

AbstractGe-Sb-Te (GST) thin films were deposited by chemical vapor deposition (CVD) and hot-wire chemical vapor deposition (HW CVD). Several precursor sets (tetraethylgermanium - trimethylantimony - dimethyltellurium (TEGe-TMSb-DMTe), tetraisopropylgermanium - triisopropylantimony - di-tertiarybutyltellurium (TiPGe-TiPSb-DtBTe) and tetraallylgermanium - triisopropylantimony - diisopropyltellurium (TAGe-TiPSb-DiPTe)) were tested for CVD. For the TEGe-TMSb-DMTe precursor set tellurium and germanium could be detected in the films for all deposition temperatures investigated, while Sb was found only in the films deposited at elevated temperature higher than 550 °C. The deposition temperature could be reduced by using two other precursor sets (TiPGe-TiPSb-DtBTe and TAGe-TiPSb-DiPTe). The Ge content, however, could not be sufficiently increased to obtain stoichiometric Ge2Sb2Te5 films. Therefore, the hot wire or catalytic method was applied to improve the decomposition of the precursors. In this case, the desired composition (e.g. Ge2Sb2Te5) was obtained at each investigated temperature by adjusting dosing and deposition parameters. Additionally, film roughness (as low as 2 nm) and deposition rates could be optimized by adjusting deposition temperature and pressure.

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Optimization of Chemical Vapor Deposition Process

Volume 1: 32nd Design Automation Conference, Parts A and B ◽

10.1115/detc2006-99748 ◽

2006 ◽

Cited By ~ 4

Author(s):

Pradeep George ◽

Hae Chang Gea ◽

Yogesh Jaluria

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Response Surface ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Transport Processes ◽

Operating Conditions ◽

Design Parameters ◽

Large Area

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

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Surface Roughness and Morphology Analysis Using an Atomic Force Microscopy of Polycrystalline Diamond Coated Si3N4 Deposited by Microwave Plasma Assisted Chemical Vapor Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.136.153 ◽

2008 ◽

Vol 136 ◽

pp. 153-160

Author(s):

Agung Purniawan ◽

E. Hamzah ◽

M.R.M. Toff

Keyword(s):

Surface Roughness ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Power ◽

Microwave Plasma ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Chamber Pressure ◽

Diamond Nucleation ◽

Deposition Parameters

Diamond is the hardest material and has high chemical resistant which is one form of carbon. In the present work a study was carried out on polycrystalline diamond coated Si3N4 substrate. The diamond was deposited by Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) under varying deposition parameters namely CH4 diluted in H2, microwave power and chamber pressure. SEM and AFM are used to investigate the surface morphology and surface roughness. Nucleation phenomena and crystal width were also studied using AFM. Based on SEM investigation it was found that the chamber pressure and %CH4 have more significant effects on nucleation and facet of polycrystalline diamond, In addition microwave power has an effect on the diamond facet that changed from cubic to cauliflower structure. Surface roughness results show that increasing the %CH4 has decreased surface roughness 334.83 to 269.99 nm at 1 to 3% CH4, respectively. Increasing microwave power leads to increase in diamond nucleation and coalescence which lead to less surface roughness. Increasing gas pressure may eliminate Si contamination however it reduces diamond nucleation.

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Hydrodynamic Studies of Fluidized Bed Chemical Vapor Deposition Reactors to Produce Carbon Nano Tubes via Catalytic Decomposition over Co/Pd MgO

International Journal of Engineering ◽

10.5829/idosi.ije.2015.28.12c.01 ◽

2015 ◽

Vol 28 (12 (C)) ◽

Keyword(s):

Chemical Vapor Deposition ◽

Fluidized Bed ◽

Vapor Deposition ◽

Chemical Vapor ◽

Catalytic Decomposition ◽

Carbon Nano Tubes

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Few- and multi-layer graphene on carbon fibers: synthesis and application

RSC Advances ◽

10.1039/c5ra15607f ◽

2015 ◽

Vol 5 (99) ◽

pp. 81266-81274 ◽

Cited By ~ 10

Author(s):

F. Ghaemi ◽

R. Yunus ◽

A. Ahmadian ◽

F. Ismail ◽

M. A. M. Salleh ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Fiber ◽

Carbon Fibers ◽

Vapor Deposition ◽

Chemical Vapor ◽

Layer Graphene ◽

Deposition Parameters

In the current study, we investigated the influences of chemical vapor deposition parameters on the formation of uniform structures of few- and multi-layer graphene (FLG and MLG) as a coating phase on carbon fiber (CF).

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