An Analytical Surface Potential Based Threshold Voltage Model of Triple Material Surrounding Gate Schottky Barrier MOSFET

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.3714 ◽

2015 ◽

Vol 12 (2) ◽

pp. 180-188

Author(s):

Siddhartha Mondal ◽

Debabrata Naru ◽

Angsuman Sarkar ◽

Chandan Kumar Sarkar

Keyword(s):

Schottky Barrier ◽

Surface Potential ◽

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model ◽

Schottky Barrier Mosfet

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A physics-based threshold voltage model for hetero-dielectric dual material gate Schottky barrier MOSFET

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2320 ◽

2018 ◽

Vol 31 (5) ◽

pp. e2320 ◽

Author(s):

Prashanth Kumar ◽

Brinda Bhowmick

Keyword(s):

Schottky Barrier ◽

Threshold Voltage ◽

Dual Material ◽

Threshold Voltage Model ◽

Schottky Barrier Mosfet

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Threshold voltage model of junctionless cylindrical surrounding gate MOSFETs including fringing field effects

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.09.001 ◽

2015 ◽

Vol 88 ◽

pp. 188-197 ◽

Author(s):

Santosh Kumar Gupta

Keyword(s):

Threshold Voltage ◽

Field Effects ◽

Surrounding Gate ◽

Fringing Field ◽

Threshold Voltage Model

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Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2066278 ◽

2010 ◽

Vol 57 (11) ◽

pp. 3176-3180 ◽

Author(s):

Yun Seop Yu ◽

Namki Cho ◽

Sung Woo Hwang ◽

Doyeol Ahn

Keyword(s):

Threshold Voltage ◽

Conducting Path ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2212904 ◽

2012 ◽

Vol 59 (11) ◽

pp. 3127-3129 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects

Solid-State Electronics ◽

10.1016/j.sse.2014.03.004 ◽

2014 ◽

Vol 95 ◽

pp. 52-60 ◽

Author(s):

Ajit Kumar ◽

Pramod Kumar Tiwari

Keyword(s):

Surface Potential ◽

Threshold Voltage ◽

Short Channel ◽

Fully Depleted ◽

Threshold Voltage Model

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A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.1971 ◽

2014 ◽

Vol 27 (4) ◽

pp. 682-690 ◽

Author(s):

Pradipta Dutta ◽

Binit Syamal ◽

Nagarajan Mohankumar ◽

Chandan Kumar Sarkar

Keyword(s):

Surface Potential ◽

Threshold Voltage ◽

Short Channel ◽

Heavily Doped ◽

Threshold Voltage Model

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The short-channel threshold voltage model for junctionless surrounding-gate MOSFETs

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2012.6466738 ◽

2012 ◽

Author(s):

T. K. Chiang ◽

D. H. Chang

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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Asymmetric Gate Stack Surrounding gate Transistor (ASYMGAS SGT): 2-D Analytical Threshold Voltage Model

2007 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2007.4554710 ◽

2007 ◽

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

R.S. Gupta ◽

Subhasis Haldar

Keyword(s):

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model

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An analytic threshold voltage model for the double-gate Schottky-Barrier source/drain MOSFETs

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667786 ◽

2010 ◽

Author(s):

Peicheng Li ◽

Guangxi Hu ◽

Guanghui Mei ◽

Ran Liu ◽

Yi Jiang ◽

...

Keyword(s):

Schottky Barrier ◽

Threshold Voltage ◽

Double Gate ◽

Threshold Voltage Model

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2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

Journal of Computational Electronics ◽

10.1007/s10825-017-1011-x ◽

2017 ◽

Vol 16 (3) ◽

pp. 658-665 ◽

Author(s):

Prashanth Kumar ◽

Brinda Bhowmick

Keyword(s):

Work Function ◽

Schottky Barrier ◽

Electrostatic Potential ◽

Threshold Voltage ◽

Analytical Modeling ◽

Schottky Barrier Mosfet

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