A physics-based threshold voltage model for hetero-dielectric dual material gate Schottky barrier MOSFET

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2320 ◽

2018 ◽

Vol 31 (5) ◽

pp. e2320 ◽

Author(s):

Prashanth Kumar ◽

Brinda Bhowmick

Keyword(s):

Schottky Barrier ◽

Threshold Voltage ◽

Dual Material ◽

Threshold Voltage Model ◽

Schottky Barrier Mosfet

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An Analytical Surface Potential Based Threshold Voltage Model of Triple Material Surrounding Gate Schottky Barrier MOSFET

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.3714 ◽

2015 ◽

Vol 12 (2) ◽

pp. 180-188

Author(s):

Siddhartha Mondal ◽

Debabrata Naru ◽

Angsuman Sarkar ◽

Chandan Kumar Sarkar

Keyword(s):

Schottky Barrier ◽

Surface Potential ◽

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model ◽

Schottky Barrier Mosfet

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A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges

Journal of Computational Electronics ◽

10.1007/s10825-019-01377-5 ◽

2019 ◽

Vol 18 (4) ◽

pp. 1173-1181 ◽

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Strained Si ◽

Interface Charges ◽

Dual Material ◽

Threshold Voltage Model ◽

Center Potential

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An analytic threshold voltage model for the double-gate Schottky-Barrier source/drain MOSFETs

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667786 ◽

2010 ◽

Author(s):

Peicheng Li ◽

Guangxi Hu ◽

Guanghui Mei ◽

Ran Liu ◽

Yi Jiang ◽

...

Keyword(s):

Schottky Barrier ◽

Threshold Voltage ◽

Double Gate ◽

Threshold Voltage Model

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2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

Journal of Computational Electronics ◽

10.1007/s10825-017-1011-x ◽

2017 ◽

Vol 16 (3) ◽

pp. 658-665 ◽

Author(s):

Prashanth Kumar ◽

Brinda Bhowmick

Keyword(s):

Work Function ◽

Schottky Barrier ◽

Electrostatic Potential ◽

Threshold Voltage ◽

Analytical Modeling ◽

Schottky Barrier Mosfet

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New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.870422 ◽

2006 ◽

Vol 53 (4) ◽

pp. 920-922 ◽

Author(s):

M.J. Kumar ◽

A.A. Orouji ◽

H. Dhakad

Keyword(s):

Threshold Voltage ◽

Dual Material ◽

Threshold Voltage Model

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Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Chinese Physics B ◽

10.1088/1674-1056/23/1/018501 ◽

2014 ◽

Vol 23 (1) ◽

pp. 018501 ◽

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Li Zhang ◽

Gang Jin

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Surrounding Gate ◽

Effect Transistor ◽

Dual Material ◽

Threshold Voltage Model

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A Surface Potential and Threshold Voltage Model Including Quantum Mechanical Effects for a Dual Material Double Gate Junctionless Field Effect Transistor (DMDG-JLFET)

Journal of Advanced Physics ◽

10.1166/jap.2017.1354 ◽

2017 ◽

Vol 6 (3) ◽

pp. 408-412 ◽

Author(s):

N. Bora ◽

P. Pegu ◽

R. Subadar

Keyword(s):

Surface Potential ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Mechanical ◽

Double Gate ◽

Effect Transistor ◽

Quantum Mechanical Effects ◽

Dual Material ◽

Threshold Voltage Model

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Two-Dimensional Potential and Threshold Voltage Modeling of Work Function Engineered Double Gate High-k Gate Stack Schottky Barrier MOSFET

Journal of Electronic Materials ◽

10.1007/s11664-019-07133-6 ◽

2019 ◽

Vol 48 (6) ◽

pp. 3823-3832 ◽

Author(s):

Priyanka Saha ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Work Function ◽

Schottky Barrier ◽

Threshold Voltage ◽

Double Gate ◽

Two Dimensional ◽

High K ◽

Schottky Barrier Mosfet

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Overview and status of metal S/D Schottky-barrier MOSFET technology

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.871842 ◽

2006 ◽

Vol 53 (5) ◽

pp. 1048-1058 ◽

Author(s):

J.M. Larson ◽

J.P. Snyder

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Mosfet

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A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

2008 4th International Conference on Wireless Communications, Networking and Mobile Computing ◽

10.1109/wicom.2008.460 ◽

2008 ◽

Author(s):

Xiu-Long Wu ◽

Jun-Ning Chen ◽

Dao-Ming Ke

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Threshold Voltage Model

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