Prediction of TiO2 Thin Film Growth on the Glass Beads in a Rotating Plasma Chemical Vapor Deposition Reactor

2010 ◽  
Vol 10 (5) ◽  
pp. 3211-3215 ◽  
Author(s):  
Dong-Joo Kim ◽  
Kyo-Seon Kim
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Glass Beads ◽  
Thin Film Growth ◽  
Plasma Chemical ◽  
Chemical Vapor Deposition Reactor ◽  
Plasma Chemical Vapor Deposition

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

2002 ◽  
Vol 742 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Ryoji Kosugi ◽  
Shinichi Nakashima ◽  
Kenji Fukuda ◽  
Kazuo Arai
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Plasma Chemical ◽  
Step Bunching ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Films

ABSTRACTHomoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.

Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2

2012 ◽  
Vol 89 ◽  
pp. 109-115 ◽  
Author(s):  
Jong Mun Choi ◽  
Dohan Lee ◽  
Ji Hun Park ◽  
Chang Gyoun Kim ◽  
Taek-Mo Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Atmosphere ◽  
Thin Film Growth ◽  
Cu Thin Film
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