Three Dimensional P-doped Graphene Synthesized by Eco-Friendly Chemical Vapor Deposition for Oxygen Reduction Reactions

2016 ◽  
Vol 16 (6) ◽  
pp. 6216-6222 ◽  
Author(s):  
Xiaoguang Li ◽  
Yunfeng Qiu ◽  
Ping An Hu
2016 ◽  
Vol 52 (88) ◽  
pp. 12992-12995 ◽  
Author(s):  
Min-Qiang Wang ◽  
Cui Ye ◽  
Shu-Juan Bao ◽  
Zhao-Yang Chen ◽  
Ya-Nan Yu ◽  
...  

A novel platanus hispanica-like, metal organic complex derived highly effective ORR electrocatalyst, Co–CNTFs was fabricated in this work.


1992 ◽  
Vol 114 (3) ◽  
pp. 735-742 ◽  
Author(s):  
Y. T. Lin ◽  
M. Choi ◽  
R. Greif

A study has been made of the deposition of particles that occurs during the modified chemical vapor deposition (MCVD) process. The three-dimensional conservation equations of mass, momentum, and energy have been solved numerically for forced flow, including the effects of buoyancy and variable properties in a heated, rotating tube. The motion of the particles that are formed is determined from the combined effects resulting from thermophoresis and the forced and secondary flows. The effects of torch speed, rotational speed, inlet flow rate, tube radius, and maximum surface temperature on deposition are studied. In a horizontal tube, buoyancy results in circumferentially nonuniform temperature and velocity fields and particle deposition. The effect of tube rotation greatly reduces the nonuniformity of particle deposition in the circumferential direction. The process is chemical-reaction limited at larger flow rates and particle-transport limited at smaller flow rates. The vertical tube geometry has also been studied because its symmetric configuration results in uniform particle deposition in the circumferential direction. The “upward” flow condition results in a large overall deposition efficiency, but this is also accompanied by a large “tapered entry length.”


1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.


2014 ◽  
Vol 122 ◽  
pp. 285-288 ◽  
Author(s):  
Zhuchen Liu ◽  
Zhiqiang Tu ◽  
Yongfeng Li ◽  
Fan Yang ◽  
Shuang Han ◽  
...  

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