Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors

2017 ◽  
Vol 17 (5) ◽  
pp. 3293-3297 ◽  
Author(s):  
Chan-Mo Kang ◽  
Hoon Kim ◽  
Yeon-Wha Oh ◽  
Kyu-Ha Baek ◽  
Lee-Mi Do
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Annealing Effect ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Temperature Solution ◽  
Indium Oxide Thin Film

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Nitrate Precursor ◽  
Temperature Solution ◽  
Indium Oxide Thin Film

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.

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