Low-temperature, solution-processed indium-oxide thin-film transistors fabricated by using an ultraviolet-ozone treatment

2016 ◽  
Vol 68 (8) ◽  
pp. 971-974 ◽  
Author(s):  
Hoon Kim ◽  
Chan-mo Kang ◽  
Yeon-Wha Oh ◽  
Jin Hwa Ryu ◽  
Kyu-Ha Baek ◽  
...  
2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.


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