High Efficiency Quantum Dot Light-Emitting Diode by Solution Printing of Zinc Oxide Nanoparticles

2020 ◽  
Vol 20 (7) ◽  
pp. 4454-4457 ◽  
Author(s):  
Da-Young Park ◽  
Jae-Hoon Lim ◽  
Mi-Young Ha ◽  
Dae-Gyu Moon

Quantum dot light-emitting diodes (QLEDs) have attracted considerable attention owing to the narrow emission spectra, wide color gamut, high quantum yield and size-controlled emission wavelength. Zinc oxide nanoparticles have been widely used as an electron transport layer (ETL) in QLEDs due to their excellent electrical properties. In this study, we compared the efficiency of QLEDs with organic and zinc oxide ETLs in viewpoint of the charge balance. The QLEDs were constructed using ZnO nanoparticles with an average particle size of 3 nm or 3TPYMB as the ETL materials. CdSe/ZnS quantum dots and poly-TPD were used as a light-emitting elements and hole transporting material, respectively. The QLED with 3TPYMB ETL exhibited current efficiency of 7.71 cd/A, while the efficiency of the QLED using ZnO nanoparticles was significantly improved to 38.76 cd/A. Such a substantial improvement of emission efficiency in the QLEDs with ZnO ETL was attributed to the much better charge balance by the ZnO.

2021 ◽  
Vol 21 (7) ◽  
pp. 3795-3799
Author(s):  
Mi-Young Ha ◽  
Chang Kyo Kim ◽  
Dae-Gyu Moon

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.


RSC Advances ◽  
2020 ◽  
Vol 10 (39) ◽  
pp. 23121-23127 ◽  
Author(s):  
Jun-hao Sun ◽  
Jia-hui Huang ◽  
Xu-yan Lan ◽  
Feng-chun Zhang ◽  
Ling-zhi Zhao ◽  
...  

Highly efficient blue quantum-dot light-emitting diodes have been realized by blending PEG into ZnO nanoparticles as an electron transport layer due to regulating charge balance and passivating the surface defect states of ZnO nanoparticles.


RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.


2018 ◽  
Vol 6 (30) ◽  
pp. 8099-8104 ◽  
Author(s):  
Lixi Wang ◽  
Jiangyong Pan ◽  
Jianping Qian ◽  
Wei Lei ◽  
Yuanjun Wu ◽  
...  

A highly efficient QLED achieving white emission at a low driving voltage is obtained by employing Zn0.95Mg0.05O as the electron transport layer.


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