Tunneling Current Density Model with Ideal Barrier for Ultra Thin Films Al2O3 High-k Material Based MOS Devices
2017 ◽
Vol 12
(1)
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pp. 67-71
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2016 ◽
Vol 860
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pp. 30-34
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1991 ◽
Vol 49
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pp. 1080-1081
Keyword(s):
2010 ◽
Vol 470
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pp. S972-S974
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Keyword(s):
2005 ◽
Vol 15
(2)
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pp. 3046-3049
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Keyword(s):