Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target

2014 ◽  
Vol 6 (6) ◽  
pp. 1215-1220 ◽  
Author(s):  
M. Senthil Kumar ◽  
S. S. Kushvaha ◽  
K. K. Maurya
CrystEngComm ◽  
2020 ◽  
Vol 22 (1) ◽  
pp. 142-146
Author(s):  
Fabi Zhang ◽  
Congyu Hu ◽  
Makoto Arita ◽  
Katsuhiko Saito ◽  
Tooru Tanaka ◽  
...  

Low temperature growth of β-(AlGa)2O3 films has been realized by oxygen radical assisted pulsed laser deposition.


Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 641-648 ◽  
Author(s):  
F.O Adurodija ◽  
H Izumi ◽  
T Ishihara ◽  
H Yoshioka ◽  
H Matsui ◽  
...  

2002 ◽  
Vol 80 (15) ◽  
pp. 2716-2718 ◽  
Author(s):  
J. Giapintzakis ◽  
C. Grigorescu ◽  
A. Klini ◽  
A. Manousaki ◽  
V. Zorba ◽  
...  

2004 ◽  
Vol 43 (No. 2B) ◽  
pp. L240-L242 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takeshi Hara ◽  
Tomohito Fukugawa ◽  
Ling yun Zhu ◽  
Masaru Itakura ◽  
...  

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