High performance PZT thick film actuators using in plane polarisation

2015 ◽  
Vol 114 (4) ◽  
pp. 237-242 ◽  
Author(s):  
D. Ernst ◽  
B. Bramlage ◽  
S. E. Gebhardt ◽  
A. J. Schönecker
Keyword(s):  
Thick Film ◽  
High Performance ◽  
Pzt Thick Film

High-performance low-frequency MEMS energy harvester via partially covering PZT thick film

2018 ◽  
Vol 28 (9) ◽  
pp. 095007 ◽  
Author(s):  
Guimiao Li ◽  
Zhiran Yi ◽  
Yili Hu ◽  
Jingquan Liu ◽  
Bin Yang
Keyword(s):  
Thick Film ◽  
High Performance ◽  
Energy Harvester ◽  
Low Frequency ◽  
Pzt Thick Film

scholarly journals Formation of PZT Thick Film Single Elements Using EHDA Deposition

2009 ◽  
Vol 628-629 ◽  
pp. 405-410 ◽  
Author(s):  
Da Zhi Wang ◽  
R.A. Dorey
Keyword(s):  
Thick Film ◽  
Relative Permittivity ◽  
Ultrasonic Transducer ◽  
Sol Gel ◽  
Etching Process ◽  
Single Element ◽  
Electrohydrodynamic Atomization ◽  
Fringe Effect ◽  
Pzt Thick Film

In this paper, electrohydrodynamic atomization combined with a polymeric micromoulding technique was used to form PZT single element devices using a PZT sol-gel slurry without an etching process. The PZT single element device was initially designed to work as a piezoelectric ultrasonic transducer consisting of a circular or a square of various sizes, which was produced and used to evaluate the process. The resulting PZT device had a homogenous microstructure. It was observed that the relative permittivity of the circular and square single element devices was especially high at small size due to the fringe effect. The results show that the radius and width of the PZT single circular and square element devices with a thickness of 15µm should be bigger than 400µm in order to reduce the fringe effect.

scholarly journals Preparation and characterization of PZT thick film enhanced by ZnO nanowhiskers for MEMS piezoelectric generators

2011 ◽  
Vol 21 (2) ◽  
pp. 159-163 ◽  
Author(s):  
Zhong-xia DUAN ◽  
Guo-qin YU ◽  
Jun-biao LIU ◽  
Jun LIU ◽  
Xiao-wen DONG ◽  
...  
Keyword(s):  
Thick Film ◽  
Pzt Thick Film

Growth of high-performance 4 5 m thick film REBCO tapes doped with hafnium using Advanced MOCVD

2021 ◽  
pp. 1-1
Author(s):  
Mahesh Paidpilli ◽  
Rudra Pratap ◽  
Mehdi Kochat ◽  
Eduard Galstyan ◽  
Chirag Goel ◽  
...  
Keyword(s):  
Thick Film ◽  
High Performance

scholarly journals High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

2010 ◽  
Vol 5 ◽  
pp. 1164-1167 ◽  
Author(s):  
Tomasz Zawada ◽  
Karsten Hansen ◽  
Rasmus Lou-Moeller ◽  
Erling Ringgaard ◽  
Thomas Pedersen ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Thick Film ◽  
High Performance

High-performance electrical properties of La-based perovskite ceramics for the functional phase of thick film resistors

2020 ◽  
Author(s):  
Yongcheng Lu ◽  
Yuanxun Li ◽  
Daming Chen ◽  
Rui Peng ◽  
Qinghui Yang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Properties ◽  
Thick Film ◽  
High Performance ◽  
Composite Ceramics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alternative Material ◽  
Perovskite Ceramics ◽  
Scanning Electron

Abstract In order to explore an economical functional phase alternative material for thick film resistors, the crystal structure, microstructure, and electrical properties of (1-x)LSCN + xLCNZ (x = 0.0–1.0) composite ceramics were studied through solid-state reaction experiments. The composite ceramics were characterized by x–ray diffraction, scanning electron microscopy, energy dispersive x–ray spectroscopy, and DC four–probe method. Results suggested that the main phases of LSCN and LCNZ were formed, along with a small part of impurity phases. The addition of LCNZ to LSCN decreased the electrical conductivity and changed the TCR from positive to negative. Zero TCR could be achieved around 0.6 < x < 0.8 and relatively low absolute TCR values could be obtained for the samples of 0.4 ≤ x ≤ 0.8. The ceramic of 0.6LSCN + 0.4LCNZ showed the optimal performances of conductivity = 1923 S/cm, TCR = 379.54 ppm/℃, and relative density = 95.05%.

A Case Study of Ultra-Leach Resistant Thick Film Conductors for Non-Magnetic Applications

2015 ◽  
Vol 2015 (1) ◽  
pp. 000273-000277
Author(s):  
John J. B. Silvia
Keyword(s):  
Thick Film ◽  
High Performance ◽  
Processing Parameters ◽  
Electronics Manufacturing ◽  
Surface Mount Technology ◽  
New Material ◽  
High Temperature Processing ◽  
Robust Processing ◽  
Very High

Today, designers of SMT electronics are being asked to achieve more while designing around new technical constraints. Many times these constraints force designers to sacrifice commercial advantages of their designs in order to achieve performance goals or vice-versa. This is made worse when industries and regulations impose restrictions on materials such as lead free, high temperature processing, low-PIM or non-magnetic requirements. Often, the choice comes down to either using high performance components that are expensive and sensitive to processing or robust components that either offer reduced performance or are restricted for use due to material content. This is especially true of surface-mount technology components common to electronics manufacturing where solder processing requirements are found. While typical Ag/Pt thick film conductors are a perfect choice for sensitive applications requiring robust processing, they cannot match processing parameters similar to very high leaching resistant materials like nickel barrier. Since nickel barrier is inherently ferro-resonant, some applications cannot be realized without a new material approach. Components manufactured for use in these sensitive, yet demanding applications have now been produced using an Ultra Leach Resistant (ULR) processing of Ag/Pt thick film. The performance of components produced using this ULR material and process have been evaluated for survivability in solder environments to study the resistance to leaching compared to nickel barrier and traditional “leach resistant” materials available today. The results indicate that it is possible to achieve nickel-barrier-like results without ferro-resonant properties using a “ULR” material and process.

Studies on ferroelectric and nanomechanical response of single-layered PZT thick film for energy harvester applications

2019 ◽  
Vol 551 (1) ◽  
pp. 17-23
Author(s):  
Martando Rath ◽  
E. Varadarajan ◽  
S. Premkumar ◽  
Sd Shinde ◽  
V. Natarajan ◽  
...  
Keyword(s):  
Thick Film ◽  
Energy Harvester ◽  
Pzt Thick Film
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