scholarly journals Understanding competing risks: a simulation point of view

2011 ◽  
Vol 11 (1) ◽  
Author(s):  
Arthur Allignol ◽  
Martin Schumacher ◽  
Christoph Wanner ◽  
Christiane Drechsler ◽  
Jan Beyersmann
2021 ◽  
Vol 21 (1-2) ◽  
pp. 56-71
Author(s):  
Janet van Niekerk ◽  
Haakon Bakka ◽  
Håvard Rue

The methodological advancements made in the field of joint models are numerous. None the less, the case of competing risks joint models has largely been neglected, especially from a practitioner's point of view. In the relevant works on competing risks joint models, the assumptions of a Gaussian linear longitudinal series and proportional cause-specific hazard functions, amongst others, have remained unchallenged. In this article, we provide a framework based on R-INLA to apply competing risks joint models in a unifying way such that non-Gaussian longitudinal data, spatial structures, times-dependent splines and various latent association structures, to mention a few, are all embraced in our approach. Our motivation stems from the SANAD trial which exhibits non-linear longitudinal trajectories and competing risks for failure of treatment. We also present a discrete competing risks joint model for longitudinal count data as well as a spatial competing risks joint model as specific examples.


2010 ◽  
Vol 43 (6) ◽  
pp. 1287-1299 ◽  
Author(s):  
E. Wintersberger ◽  
D. Kriegner ◽  
N. Hrauda ◽  
J. Stangl ◽  
G. Bauer

A set of algorithms is presented for the calculation of X-ray diffraction patterns from strained nanostructures. Their development was triggered by novel developments in the recording of scattered intensity distributions as well as in simulation practice. The increasing use of two-dimensional CCD detectors in X-ray diffraction experiments, with which three-dimensional reciprocal-space maps can be recorded in a reasonably short time, requires efficient simulation programs to compute one-, two- and three-dimensional intensity distributions. From the simulation point of view, the finite element method (FEM) has become the standard tool for calculation of the strain and displacement fields in nanostructures. Therefore, X-ray diffraction simulation programs must be able to handle FEM data properly. The algorithms presented here make use of the deformation fields calculated on a mesh, which are directly imported into the calculation of diffraction patterns. To demonstrate the application of the developed algorithms, they were applied to several examples such as diffraction data from a dislocated quantum dot, from a periodic array of dislocations in a PbSe epilayer grown on a PbTe pseudosubstrate, and from ripple structures at the surface of SiGe layers deposited on miscut Si substrates.


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