scholarly journals Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

2021 ◽  
Vol 17 (1) ◽  
Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Aurelio Borzi ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystallization Process ◽  
Ion Beam ◽  
Damage Threshold ◽  
High Activation ◽  
Quarter Wave ◽  
Dimensional Growth ◽  
Laser Induced Damage ◽  
Significant Increment

AbstractIn this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.

scholarly journals Investigation of laser-induced damage threshold improvement mechanism during ion beam sputtering of fused silica

2017 ◽  
Vol 25 (23) ◽  
pp. 29260 ◽  
Author(s):  
Mingjin Xu ◽  
Feng Shi ◽  
Lin Zhou ◽  
Yifan Dai ◽  
Xiaoqiang Peng ◽  
...  
Keyword(s):  
Ion Beam ◽  
Damage Threshold ◽  
Fused Silica ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Laser Induced Damage

Ion-beam-assisted growth of doped Si layers

1988 ◽  
Vol 3 (6) ◽  
pp. 1212-1217 ◽  
Author(s):  
F. Priolo ◽  
A. La Ferla ◽  
E. Rimini
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Point Defects ◽  
Ion Beam ◽  
Target Temperature ◽  
Defects And Impurities

The growth of preamorphized silicon layers doped by multiple energy implants of boron, phosphorus, and boron plus phosphorus ions was investigated under irradiation with a 600 keV Kr+ + beam. The target temperature was set in the range 250–450 °C. During irradiation the growth was measured in situ by transient reflectivity. Boron and phosphorus at a concentration of 1 × 1020/cm3 enhance the rate by a factor of 3 and 2, respectively, whilst in compensated samples the rate is still more than a factor of 2 higher than in intrinsic or Ge-doped samples. This growth rate is characterized by an activation energy of 0.32 ± 0.05 eV which is, within the experimental uncertainties, independent of the dopant. The results are tentatively explained in terms of an interaction between generated point defects and impurities that increases the lifetime of defects at the crystal–amorphous interface.

Laser-induced damage of rugate and quarter-wave stacks high reflectors deposited by ion-beam sputtering

2013 ◽  
Vol 52 (8) ◽  
pp. 086103 ◽  
Author(s):  
Zhao Qiao ◽  
Ping Ma ◽  
Hao Liu ◽  
Yunti Pu ◽  
Zhichao Liu
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Quarter Wave ◽  
Laser Induced Damage

An Ion Beam Simulation of the Swelling of U3Si

1988 ◽  
Vol 100 ◽  
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher ◽  
Lynn E. Rehn ◽  
Gerard L. Hofman
Keyword(s):  
Rapid Growth ◽  
Glassy Phase ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Bright Field Image ◽  
Glassy Material ◽  
Bright Field ◽  
Service Lifetime ◽  
Dimensional Growth

ABSTRACTUranium intermetallics are under consideration as possible low-enrichment reactor fuels. These materials divide into two classes with regard to dimensional stability during their service lifetime: those which suffer extreme dimensional growth and those which do not. It has been suggested that the rapid-swelling materials are those that become glassy under irradiation while the low-swelling materials are those that remain crystalline. The structural and dimensional stabilities of U3Si (depleted uranium) have been investigated as a function of temperature duning Kr irradiation by in situ. HVEM observations. Below 550 K, this material becomes glassy during 1.0 MeV Kr irradiation. Prolonged irradiation at 475 K also leads to rapid darkening of the TEM bright field image of the specimen, growth of the initial perforation at rates which far exceed those due to sputtering, and formation of additional thin areas and holes. Irradiation at 615 K does not result in observable image darkening or rapid growth of the initial perforation. After 2×1020 Kr m-2, the crystalline material irradiated at 615 K is stabilized against subsequent ion-irradiation-induced amorphization and growth at 475 K. Similarly, after 2×1020 Kr m-2 at 475 K, the glassy phase persists at 620 K under additional Kr irradiation, and the rapid growth continues. The mechanism of the irradiation-induced growth of the glassy material does not involve gas precipitation but rather may involve deformation by viscous flow assisted by the defects generated during irradiation.

scholarly journals Study on the Absorption Characteristics and Laser Damage Properties of Fused Silica Optics under Flexible Polishing and Shallow DCE Process

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1226
Author(s):  
Wanli Zhang ◽  
Feng Shi ◽  
Ci Song ◽  
Ye Tian ◽  
Yongxiang Shen
Keyword(s):  
Chemical Etching ◽  
Ion Beam ◽  
Damage Threshold ◽  
Fused Silica ◽  
Laser Damage ◽  
Damage Resistance ◽  
Etching Depth ◽  
Treatment Processes ◽  
Laser Induced Damage ◽  
Combined Technique

The enhancement of laser damage resistance of fused silica optics was a hotspot in scientific research. At present, a variety of modern processes have been produced to improve the laser induced damage threshold (LIDT) of fused silica optics. They included pre-treatment processes represented by flexible computer controlled optical surfacing (CCOS), magnetorheological finishing (MRF), ion beam finishing (IBF), and post-treatment processes represented by dynamic chemical etching (DCE). These have achieved remarkable results. However, there are still some problems that need to be solved urgently, such as excessive material removal, surface accuracy fluctuation in the DCE process, and the pollution in MRF process, etc. In view of above problems, an MRF, CCOS, IBF and shallow DCE combined technique was used to process fused silica optics. The surface morphology could be greatly controlled and chemical etching depth was reduced, while the LIDT increased steadily. After processing by this combined technique, the LIDT increased to 12.1 J/cm2 and the laser damage resistance properties of fused silica were significantly enhanced. In general, the MRF, IBF, CCOS and shallow DCE combined technique brought much help to the enhancement of laser damage resistance of fused silica, and could be used as a process route in the manufacturing process of fused silica.

scholarly journals Influence of the Characteristics of Multilayer Interference Antireflection Coatings Based on Nb, Si, and Al Oxides on the Laser-Induced Damage Threshold of ZnGeP2 Single Crystal

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1549
Author(s):  
Nikolai Nikolayevich Yudin ◽  
Mikhail Zinoviev ◽  
Vladislav Gladkiy ◽  
Evgeny Moskvichev ◽  
Igor Kinyaevsky ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Nonlinear Crystal ◽  
Ion Beam ◽  
Damage Threshold ◽  
Antireflection Coating ◽  
Coated Sample ◽  
Antireflection Coatings ◽  
Ion Beam Sputtering ◽  
Incident Laser Radiation ◽  
Laser Induced Damage

In this work, the effect of the defect structure and the parameters of antireflection interference coatings based on alternating layers of Nb2O5/Al2O3 and Nb2O5/SiO2 layers on the laser-induced damage threshold of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm was determined. Coating deposition was carried out using the ion-beam sputtering method. The laser-induced damage threshold of the sample with a coating based on alternating layers Nb2O5 and SiO2 was W0d = 1.8 J/cm2. The laser-induced damage threshold of the coated sample based on alternating layers of Nb2O5 and Al2O3 was W0d = 2.35 J/cm2. It has been found that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser-induced damage threshold of a nonlinear crystal due to local mechanical stresses and the scattering of incident laser radiation.

scholarly journals Effects of Ion Beam Etching on the Nanoscale Damage Precursor Evolution of Fused Silica

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1294
Author(s):  
Yaoyu Zhong ◽  
Yifan Dai ◽  
Feng Shi ◽  
Ci Song ◽  
Ye Tian ◽  
...  
Keyword(s):  
Silica Surface ◽  
Ion Beam ◽  
Damage Threshold ◽  
Fused Silica ◽  
Structural Defects ◽  
Laser Damage ◽  
Material Structure ◽  
Ion Beam Etching ◽  
Damage Resistance ◽  
Laser Induced Damage

Nanoscale laser damage precursors generated from fabrication have emerged as a new bottleneck that limits the laser damage resistance improvement of fused silica optics. In this paper, ion beam etching (IBE) technology is performed to investigate the evolutions of some nanoscale damage precursors (such as contamination and chemical structural defects) in different ion beam etched depths. Surface material structure analyses and laser damage resistance measurements are conducted. The results reveal that IBE has an evident cleaning effect on surfaces. Impurity contamination beneath the polishing redeposition layer can be mitigated through IBE. Chemical structural defects can be significantly reduced, and surface densification is weakened after IBE without damaging the precision of the fused silica surface. The photothermal absorption on the fused silica surface can be decreased by 41.2%, and the laser-induced damage threshold can be raised by 15.2% after IBE at 250 nm. This work serves as an important reference for characterizing nanoscale damage precursors and using IBE technology to increase the laser damage resistance of fused silica optics.

In situ Transmission Electron Microscopy Ion Irradiation Studies at Orsay

2005 ◽  
Vol 20 (7) ◽  
pp. 1758-1768 ◽  
Author(s):  
M-O. Ruault ◽  
F. Fortuna ◽  
H. Bernas ◽  
J. Chaumont ◽  
O. Kaïtasov ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Three Dimensional ◽  
Medium Energy ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Process Dynamics ◽  
Transmission Electron ◽  
Dimensional Growth

Crucial features of materials evolution due to ion beam irradiation are often revealed only through studies of process dynamics. We review some significant examples of such experiments performed over the last 25 years with the Orsay in situ facility: a transmission electron microscope setup (with temperature stages operating between 4 and 1000 K) on a medium energy (3–570 keV) ion beam line. New results on nanocavity evolution and metal silicide nanoprecipitates in Si are presented briefly.We show that CoSi2 nanoprecipitate growth is mainly due to the constant Co atom contribution from the ion beam, and CoSi2 platelet growth is the result of a three-dimensional to two-dimensional growth mode transition.

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