scholarly journals Influence of the Characteristics of Multilayer Interference Antireflection Coatings Based on Nb, Si, and Al Oxides on the Laser-Induced Damage Threshold of ZnGeP2 Single Crystal

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1549
Author(s):  
Nikolai Nikolayevich Yudin ◽  
Mikhail Zinoviev ◽  
Vladislav Gladkiy ◽  
Evgeny Moskvichev ◽  
Igor Kinyaevsky ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Nonlinear Crystal ◽  
Ion Beam ◽  
Damage Threshold ◽  
Antireflection Coating ◽  
Coated Sample ◽  
Antireflection Coatings ◽  
Ion Beam Sputtering ◽  
Incident Laser Radiation ◽  
Laser Induced Damage

In this work, the effect of the defect structure and the parameters of antireflection interference coatings based on alternating layers of Nb2O5/Al2O3 and Nb2O5/SiO2 layers on the laser-induced damage threshold of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm was determined. Coating deposition was carried out using the ion-beam sputtering method. The laser-induced damage threshold of the sample with a coating based on alternating layers Nb2O5 and SiO2 was W0d = 1.8 J/cm2. The laser-induced damage threshold of the coated sample based on alternating layers of Nb2O5 and Al2O3 was W0d = 2.35 J/cm2. It has been found that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser-induced damage threshold of a nonlinear crystal due to local mechanical stresses and the scattering of incident laser radiation.

scholarly journals Investigation of laser-induced damage threshold improvement mechanism during ion beam sputtering of fused silica

2017 ◽  
Vol 25 (23) ◽  
pp. 29260 ◽  
Author(s):  
Mingjin Xu ◽  
Feng Shi ◽  
Lin Zhou ◽  
Yifan Dai ◽  
Xiaoqiang Peng ◽  
...  
Keyword(s):  
Ion Beam ◽  
Damage Threshold ◽  
Fused Silica ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Laser Induced Damage

scholarly journals Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

2021 ◽  
Vol 17 (1) ◽  
Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Aurelio Borzi ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystallization Process ◽  
Ion Beam ◽  
Damage Threshold ◽  
High Activation ◽  
Quarter Wave ◽  
Dimensional Growth ◽  
Laser Induced Damage ◽  
Significant Increment

AbstractIn this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.

Raman microprobe studies of laser induced damage in dielectric films

1991 ◽  
Vol 6 (1) ◽  
pp. 126-133 ◽  
Author(s):  
P.L. White ◽  
G.J. Exarhos ◽  
M. Bowden ◽  
N.M. Dixon ◽  
D.J. Gardiner
Keyword(s):  
Ion Beam ◽  
Rapid Quenching ◽  
Electron Beam Evaporation ◽  
Dielectric Films ◽  
Second Phase ◽  
Ion Beam Sputtering ◽  
Coating Materials ◽  
Electron Stream ◽  
Raman Microprobe ◽  
Laser Induced Damage

Raman microprobe studies of pulsed laser damaged TiO2 films deposited using three different methods are reported. Phase transformation and redeposition of coating materials were observed in selected regions of amorphous films deposited by ion beam sputtering and electron beam evaporation. Preferential removal of a specific phase or transformation to a second phase were observed in reactively sputtered films. Some damage sites exhibited regions of stress heterogeneity which can be explained in terms of the return electron stream model of plasma/target interaction and rapid quenching.

Laser-induced damage of rugate and quarter-wave stacks high reflectors deposited by ion-beam sputtering

2013 ◽  
Vol 52 (8) ◽  
pp. 086103 ◽  
Author(s):  
Zhao Qiao ◽  
Ping Ma ◽  
Hao Liu ◽  
Yunti Pu ◽  
Zhichao Liu
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Quarter Wave ◽  
Laser Induced Damage

Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal

2021 ◽  
Vol 51 (4) ◽  
pp. 306-316
Author(s):  
N N Yudin ◽  
Oleg Leonidovich Antipov ◽  
A I Gribenyukov ◽  
Il'ya Dmitrievich Eranov ◽  
S N Podzyvalov ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Single Crystal ◽  
Damage Threshold ◽  
Processing Technology ◽  
Laser Induced Damage
Sign in / Sign up

Export Citation Format

Share Document