Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy

2002 ◽  
pp. 339-356
Keyword(s):  
Molecular Beam Epitaxy ◽  
Phase Stability ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic molecular beam epitaxy growth of GaAs on patterned GaAs substrates

1994 ◽  
Vol 136 (1-4) ◽  
pp. 204-209 ◽  
Author(s):  
D. Marx ◽  
H. Asahi ◽  
X.F. Liu ◽  
Y. Okuno ◽  
K. Inoue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gaas Substrates ◽  
Metalorganic Molecular Beam Epitaxy

Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy

1990 ◽  
Vol 29 (Part 2, No. 5) ◽  
pp. L727-L730 ◽  
Author(s):  
Yi-hong Wu ◽  
Takashi Toyoda ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gaas Substrates ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy
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