Nanoscale Organic Molecular Thin Films for Information Memory Applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

Download Full-text

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

Microelectronic Engineering ◽

10.1016/j.mee.2015.02.027 ◽

2015 ◽

Vol 138 ◽

pp. 86-90 ◽

Cited By ~ 14

Author(s):

Pi-Chun Juan ◽

Jyh-Liang Wang ◽

Tsang-Yen Hsieh ◽

Cheng-Li Lin ◽

Chia-Ming Yang ◽

...

Keyword(s):

Thin Films ◽

Nonvolatile Memory ◽

Ferroelectric Thin Films ◽

Memory Applications ◽

Electrical Characterizations

Download Full-text

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

MRS Proceedings ◽

10.1557/proc-541-579 ◽

1998 ◽

Vol 541 ◽

Cited By ~ 1

Author(s):

Tingkai Li ◽

Fengyan Zhang ◽

Sheng Teng Hsu

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Chemical Vapor ◽

Dielectric Constants ◽

Memory Devices ◽

Leakage Currents ◽

Fatigue Characteristics ◽

Ferroelectric Memory ◽

Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

Download Full-text