Measurement of Oxide Etch Rate of SOI Structure using near IR Microscopy

2002 ◽  
Vol T101 (1) ◽  
pp. 185 ◽  
Author(s):  
Jyrki Kiiham?ki
Keyword(s):  
Etch Rate ◽  
Ir Microscopy ◽  
Near Ir

Surface Brightness Scale of Galactic Cepheids

1999 ◽  
Vol 190 ◽  
pp. 561-562
Author(s):  
G. P. Di Benedetto
Keyword(s):  
Surface Brightness ◽  
Variable Stars ◽  
Giant Stars ◽  
Near Ir

An accurate calibration of the surface brightness scaleSVas a function of the near-IR color (V–K) has been recently measured for non-variable Galactic dwarf and giant stars. It can be shown that this correlation can be applied to theSVscale of Galactic Cepheid variable stars, which are of major cosmological interest.

FR-IR Molecular Microanalysis System

1990 ◽  
Vol 48 (2) ◽  
pp. 270-271
Author(s):  
John A. Reffner ◽  
William T. Wihlborg
Keyword(s):  
Fourier Transform ◽  
Fourier Transform Infrared ◽  
Integrated System ◽  
Morphological Examination ◽  
Fully Integrated ◽  
Ir Microscopy ◽  
Normal Functions ◽  
Infrared Microspectroscopy ◽  
Infrared Spectral ◽  
Ft Ir

The IRμs™ is the first fully integrated system for Fourier transform infrared (FT-IR) microscopy. FT-IR microscopy combines light microscopy for morphological examination with infrared spectroscopy for chemical identification of microscopic samples or domains. Because the IRμs system is a new tool for molecular microanalysis, its optical, mechanical and system design are described to illustrate the state of development of molecular microanalysis. Applications of infrared microspectroscopy are reviewed by Messerschmidt and Harthcock.Infrared spectral analysis of microscopic samples is not a new idea, it dates back to 1949, with the first commercial instrument being offered by Perkin-Elmer Co. Inc. in 1953. These early efforts showed promise but failed the test of practically. It was not until the advances in computer science were applied did infrared microspectroscopy emerge as a useful technique. Microscopes designed as accessories for Fourier transform infrared spectrometers have been commercially available since 1983. These accessory microscopes provide the best means for analytical spectroscopists to analyze microscopic samples, while not interfering with the FT-IR spectrometer’s normal functions.

Forensic applications of IR infrared microscopic internal reflection spectroscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1528-1529
Author(s):  
Edward G. Bartick ◽  
John A. Reffner
Keyword(s):  
Specular Reflection ◽  
Forensic Analysis ◽  
Attenuated Total Reflection ◽  
Internal Reflection ◽  
Standard Size ◽  
Ir Microscopy ◽  
Ir Analysis ◽  
Plastic Explosives ◽  
Internal Reflection Spectroscopy ◽  
Reflectance Measurements

Since the introduction of commercial Fourier transform infrared (FTIR) microscopic systems in 1983, IR microscopy has developed as an important analytical tool in research, industry and forensic analysis. Because of the frequent encounter of small quantities of physical evidence found at crime scenes, spectroscopic IR microscopes have proven particularly valuable for forensic applications. Transmittance and reflectance measurements have proven very useful. Reflection-absorption, specular reflection, and diffuse reflection have all been applied. However, it has been only very recently that an internal reflection (IRS) objective has been commercially introduced.The IRS method, also known as attenuated total reflection (ATR), has proven very useful for IR analysis of standard size samples. The method has been applied to adhesive tapes, plastic explosives, and general applications in the analysis of opaque materials found as evidence. The small quantities or uncontaminated areas of specimens frequently found requiring forensic analysis will often be directly applicable to microscopic IRS analysis.

Plasmon-assisted interaction of Si with light, for cancer hyperthermia and electromagnetic energy harvest

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi
Keyword(s):  
Silicon Nanowires ◽  
Metallic Nanoparticles ◽  
Near Infrared ◽  
Optical Transition ◽  
Electromagnetic Energy ◽  
Energy Harvest ◽  
Absorption Enhancement ◽  
Ir Absorption ◽  
Absorption Mechanism ◽  
Near Ir

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.

NEAR IR FARADAY ROTATION ON YIG DOPED WITH TETRAVALENT AND PENTAVALENT ELEMENTS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-969-C8-970 ◽  
Author(s):  
F. D'Orazio ◽  
F. Giammaria ◽  
F. Lucari ◽  
G. Parone
Keyword(s):  
Faraday Rotation ◽  
Near Ir

Results of Spatial Structure of Atmosphere Radiation in a Spectral Range (1.5–2) µm Research

2018 ◽  
pp. 7-13
Author(s):  
Anton M. Mishchenko ◽  
Sergei S. Rachkovsky ◽  
Vladimir A. Smolin ◽  
Igor V . Yakimenko
Keyword(s):  
Spatial Structure ◽  
Unmanned Aerial Vehicle ◽  
Wavelength Range ◽  
Spectral Range ◽  
Near Ir ◽  
Optoelectronic Systems ◽  
Aerial Vehicle

Results of experimental studying radiation spatial structure of atmosphere background nonuniformities and of an unmanned aerial vehicle being the detection object are presented. The question on a possibility of its detection using optoelectronic systems against the background of a cloudy field in the near IR wavelength range is also considered.

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

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