Low Threshold Gain-Narrowing Characteristics of Fluorescent Styrylbenzene Derivatives as a Guest Molecule in an Organic Thin-Film Optical Waveguide

AbstractOrganic thin film transistors for display applications are investigated. Different dielectric materials – inorganic and organic – have been studied with respect to their electrical performance It was found that anodic oxidation is an excellent process to achieve smooth high-k dielectrics with high breakthrough field strength. With the proposed electrolyte electrical properties were further improved. The alignment of pentacene on different insulators as well as transistors characteristics is presented.

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Low-threshold deep-blue organic thin-film distributed feedback laser

2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference ◽

10.1109/cleoe-iqec.2007.4385895 ◽

2007 ◽

Author(s):

Hsing-chieh Cheng ◽

Hao-Wu Lin ◽

Chung-Chih Wu ◽

Ken-Tsung Wong ◽

Chieh-Hsiung Kuan

Keyword(s):

Thin Film ◽

Distributed Feedback ◽

Organic Thin Film ◽

Distributed Feedback Laser ◽

Deep Blue ◽

Low Threshold

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Fabrication of Organic Thin Film Transistors Using Low Temperature, Soluble Silicon Oxide as the Gate Dielectrics

MRS Proceedings ◽

10.1557/proc-0965-s06-01 ◽

2006 ◽

Vol 965 ◽

Author(s):

Jeng-Hua Wei ◽

HorngJiunn Lin ◽

Ying-Ren Chen

Keyword(s):

Thin Film ◽

Silicon Oxide ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Thin Film Transistor ◽

Gate Insulator ◽

Breakdown Field ◽

Organic Thin Film ◽

Water Based ◽

Low Threshold

ABSTRACTIn this paper, a unique water-based, liquid phase deposited silicon oxide (LPD SiO2) is adapted to the fabrication process of the organic thin film transistor (OTFT). Through the use of this process, an OTFT with a silicon oxide gate insulator is successfully fabricated at 100°C or less. At this low process temperature, the SiO2 functions efficiently as a gate dielectric with the breakdown field being larger than 5 MV/cm, the leakage current being near 1 pA/um2 with a gate bias of 20 V and the surface roughness being less than 1nm. Due to the high quality silicon oxide, the oxide-gated OTFT shows the low threshold voltage (-1 ∼ -2V) and medium on/off current ratio (∼1000). Because this oxide is a water-based process, it is highly resistant to the following soluble semiconductor material and its solvent.

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Gain-narrowing characteristics of fluorescent organic molecules with symmetrical or asymmetrical structures in a neat thin-film optical waveguide

Journal of Photochemistry and Photobiology A Chemistry ◽

10.1016/s1010-6030(03)00037-6 ◽

2003 ◽

Vol 158 (2-3) ◽

pp. 219-221 ◽

Cited By ~ 7

Author(s):

Musubu Ichikawa ◽

Tamami Tachi ◽

Makoto Satsuki ◽

Sadaharu Suga ◽

Toshiki Koyama ◽

...

Keyword(s):

Thin Film ◽

Optical Waveguide ◽

Organic Molecules ◽

Gain Narrowing

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Organic Thin-Film Transistors with Low Threshold Voltage Variation on Low-Temperature Substrates

Electrochemical and Solid-State Letters ◽

10.1149/1.3046068 ◽

2009 ◽

Vol 12 (3) ◽

pp. H50 ◽

Cited By ~ 8

Author(s):

S. Gowrisanker ◽

Y. Ai ◽

H. Jia ◽

M. A. Quevedo-Lopez ◽

H. N. Alshareef ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Voltage Variation ◽

Low Threshold

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Effective performance improvement of organic thin film transistors with multi-layer modifications

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200138 ◽

2020 ◽

Vol 91 (3) ◽

pp. 30201

Author(s):

Hang Yu ◽

Jianlin Zhou ◽

Yuanyuan Hao ◽

Yao Ni

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Organic Thin Film Transistors ◽

Electrical Performance ◽

Hole Injection ◽

Organic Thin Film ◽

Effective Performance ◽

Significant Performance ◽

P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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