Dielectrics for Organic Transistors with Low Threshold Voltage

2005 ◽  
Vol 871 ◽  
Author(s):  
Jochen Brill ◽  
Silke Goettling ◽  
Eduardo Margallo Balbás

AbstractOrganic thin film transistors for display applications are investigated. Different dielectric materials – inorganic and organic – have been studied with respect to their electrical performance It was found that anodic oxidation is an excellent process to achieve smooth high-k dielectrics with high breakthrough field strength. With the proposed electrolyte electrical properties were further improved. The alignment of pentacene on different insulators as well as transistors characteristics is presented.

2015 ◽  
Vol 6 (37) ◽  
pp. 6651-6658 ◽  
Author(s):  
Yao Li ◽  
He Wang ◽  
Zuosen Shi ◽  
Jingjing Mei ◽  
Xuesong Wang ◽  
...  

The novel high-k polymers are promising candidates for the exploration of low-threshold-voltage organic thin-film transistors (OTFTs).


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  

2019 ◽  
Vol 21 (46) ◽  
pp. 25690-25699 ◽  
Author(s):  
Xiaowu Tang ◽  
Hyeok-jin Kwon ◽  
Heqing Ye ◽  
Jae Young Kim ◽  
Jaewoong Lee ◽  
...  

The addition of hardeners to the PEDOT:PSS composites enhances both electrical and physical properties to satisfy the requirements for electrode usages in organic electronic devices.


2005 ◽  
Vol 86 (4) ◽  
pp. 042105 ◽  
Author(s):  
Dawen Li ◽  
Evert-Jan Borkent ◽  
Robert Nortrup ◽  
Hyunsik Moon ◽  
Howard Katz ◽  
...  

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