Fabrications of Low threshold Voltage Organic Thin Film Transistor by Using Inkjet-Printed Hybrid Gate dielectrics

2012 ◽  
Author(s):  
C. T. Liu ◽  
W. H. Lee
RSC Advances ◽  
2014 ◽  
Vol 4 (107) ◽  
pp. 62132-62139 ◽  
Author(s):  
Yang-Yen Yu ◽  
Cheng-Liang Liu ◽  
Yung-Chih Chen ◽  
Yu-Cheng Chiu ◽  
Wen-Chang Chen

Polyimide (PI)–BaTiO3 (BT) NPs hybrid nanocomposite dielectrics with tunable BT loadings (X) were fabricated for investigating their properties on the pentacene organic thin film transistors (OTFTs).


2006 ◽  
Vol 937 ◽  
Author(s):  
Chang-Wook Han ◽  
Sang-Geun Park ◽  
Chang-Yeon Kim ◽  
Min-Koo Han ◽  
Gun-Woo Hyung ◽  
...  

ABSTRACTA top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm2/Vs as a mobility, about 103 as an on-off ratio (In/off), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.


2010 ◽  
Vol 57 (11) ◽  
pp. 3027-3032 ◽  
Author(s):  
Ivan Nausieda ◽  
Kevin Kyungbum Ryu ◽  
David Da He ◽  
Akintunde Ibitayo Akinwande ◽  
Vladimir Bulovic ◽  
...  

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