Fabrication of Organic Thin Film Transistors Using Low Temperature, Soluble Silicon Oxide as the Gate Dielectrics

2006 ◽  
Vol 965 ◽  
Author(s):  
Jeng-Hua Wei ◽  
HorngJiunn Lin ◽  
Ying-Ren Chen
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Breakdown Field ◽  
Organic Thin Film ◽  
Water Based ◽  
Low Threshold

ABSTRACTIn this paper, a unique water-based, liquid phase deposited silicon oxide (LPD SiO2) is adapted to the fabrication process of the organic thin film transistor (OTFT). Through the use of this process, an OTFT with a silicon oxide gate insulator is successfully fabricated at 100°C or less. At this low process temperature, the SiO2 functions efficiently as a gate dielectric with the breakdown field being larger than 5 MV/cm, the leakage current being near 1 pA/um2 with a gate bias of 20 V and the surface roughness being less than 1nm. Due to the high quality silicon oxide, the oxide-gated OTFT shows the low threshold voltage (-1 ∼ -2V) and medium on/off current ratio (∼1000). Because this oxide is a water-based process, it is highly resistant to the following soluble semiconductor material and its solvent.

Effect of Polymer Gate Dielectric Surface Viscoelasticity on Pentacene Thin-Film Transistor Performance

2008 ◽  
Vol 1091 ◽  
Author(s):  
Choongik Kim ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Glass Transition ◽  
Gate Dielectric ◽  
Film Growth ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Polymer Surface ◽  
Dielectric Surface ◽  
Organic Thin Film ◽  
Dielectric Glass

AbstractPentacene is one of the most studied semiconductor for organic thin-film transistors (OTFTs), and enhanced understanding of pentacene-based TFTs has significantly advanced the organic electronics. We report here the crucial effect of the polymer gate dielectric glass transition temperature (Tg) on pentacene film growth mode, microstructure, and the resulting TFT performance. Nanoscopically-confined thin polymer films are known to exhibit reduced glass-transition temperatures versus the corresponding bulk values, and we demonstrate here that pentacene films grown on polymer gate dielectrics at temperatures well below their bulk Tg exhibit morphological/microstructural transitions and OTFT performance discontinuities at well-defined growth temperatures [defined as the surface Tg, or Tg(s)] characteristic of the underlying polymer structure and independent of the film thickness. The results argue that realistic OTFT response must take into account this fundamental polymer property, and that TFT measurements represent a new probe of polymer surface thermal properties.

scholarly journals Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

Polymers ◽  
2021 ◽  
Vol 13 (22) ◽  
pp. 3941
Author(s):  
Ching-Lin Fan ◽  
Hou-Yen Tsao ◽  
Yu-Shien Shiah ◽  
Che-Wei Yao ◽  
Po-Wei Cheng
Keyword(s):  
Thin Film ◽  
Performance Enhancement ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Control Sample ◽  
Drain Current ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
High K ◽  
Low K

In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. It resulted in an increase in the gate capacitance and an increased drain current. The surface morphology of the bilayer gate dielectric could be suitable for pentacene grain growth because the PVP layer was deposited above the organic PVA surface, thereby replacing the inorganic surface of the ITO gate electrode. The device performances were significantly improved by using the bilayer gate dielectric based upon the high-K characteristics of the PVA layer and the enlargement of the pentacene grain. Notably, the field-effect mobility was increased from 0.16 to 1.12 cm2/(Vs), 7 times higher than that of the control sample.

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

2015 ◽  
Vol 62 (7) ◽  
pp. 2313-2319 ◽  
Author(s):  
Chuan Yu Han ◽  
Wing Man Tang ◽  
Cheung Hoi Leung ◽  
Chi-Ming Che ◽  
Peter T. Lai
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Additive Effect of Poly(4-vinylphenol) Gate Dielectric in Organic Thin Film Transistor at Low Temperature Process

2013 ◽  
Vol 13 (5) ◽  
pp. 3313-3316 ◽  
Author(s):  
Ho-Jin Yun ◽  
Kyu-Ha Baek ◽  
Lee-Mi Do ◽  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Additive Effect ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Low Temperature Process

Organic Thin Film Transistor Using a Photo-Curable Organic/Inorganic Hybrid Material as a Gate Dielectric

2008 ◽  
Vol 8 (9) ◽  
pp. 4561-4564 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Yong Suk Yang ◽  
Jeong-Ik Lee ◽  
Seong Hyun Kim ◽  
Oun-Ho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dissipation Factor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Metal Insulator Metal ◽  
Oligomeric Silsesquioxane ◽  
Photo Acid Generator

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (107) ◽  
pp. 62132-62139 ◽  
Author(s):  
Yang-Yen Yu ◽  
Cheng-Liang Liu ◽  
Yung-Chih Chen ◽  
Yu-Cheng Chiu ◽  
Wen-Chang Chen
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Nanocomposite Materials ◽  
Organic Thin Film Transistors ◽  
Hybrid Nanocomposite ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Polyimide (PI)–BaTiO3 (BT) NPs hybrid nanocomposite dielectrics with tunable BT loadings (X) were fabricated for investigating their properties on the pentacene organic thin film transistors (OTFTs).

Organic Thin Film Transiators on Synthesis Paper

2006 ◽  
Vol 965 ◽  
Author(s):  
Hua-Chi Cheng ◽  
Yu-Rung Peng ◽  
Chao-An Chung ◽  
Wei-Hsin Hou ◽  
Zing-Way Pei
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Paper Substrate ◽  
Organic Transistor ◽  
The Cost ◽  
Slit Die

ABSTRACTWe have demonstrated organic thin-film transistor devices on synthesis paper of polypropylene (PP). All the fabrications are in solution-based processes except electrodes. As a barrier and smoother layer, photosensitive epoxy, 5μm-thich was coated on the paper substrate by using slit die coating. Polyvinyl phenol (PVP) was mixed with poly (melamine-co-formaldehyde) methylated, filmed by spin coating and ultraviolet (UV) cross linked to provide the gate dielectric layer. Using poly (3-hexylthiophene) as an active layer, a high-performance organic transistor with field effect mobility up to 0.006 cm2/ V s and an on/off ratio of 50 can be achieved. For the applications in flexible and disposable electronics, to built organic transistors on a cheap synthesis paper substrate can extremely lower the cost.

New approach for constrain of hysteresis in organic gate insulator based organic thin film transistor with amelioration of backbone structure

2011 ◽  
Vol 12 (6) ◽  
pp. 1043-1047 ◽  
Author(s):  
Hyoungjin Kim ◽  
Dongwoo Kim ◽  
Junyoung Lee ◽  
Hyunwook So ◽  
Junghun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
New Approach ◽  
Backbone Structure
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