1303 Crack-healing behavior of silicon nitride/silicon carbide composite at low oxygen partial pressure

2008 ◽  
Vol 2008.6 (0) ◽  
pp. 343-344
Author(s):  
Young-Soon JUNG ◽  
Wataru NAKAO ◽  
Koji TAKAHASHI ◽  
Kotoji ANDO ◽  
Sinji SAITO
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Crack Healing ◽  
Low Oxygen ◽  
Carbide Composite

OS0804 Critical stress for crack-healing of Si_3N_4/SiC in low-oxygen partial pressure

2009 ◽  
Vol 2009 (0) ◽  
pp. 396-398
Author(s):  
Yasuto NAGOSHI ◽  
Young-Soon JUNG ◽  
Koji TAKAHASHI ◽  
Kotoji ANDO
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Critical Stress ◽  
Crack Healing ◽  
Low Oxygen

scholarly journals Crack-Healing Behavior of Si3N4/SiC Composite under Low Oxygen Partial Pressure

2008 ◽  
Vol 57 (11) ◽  
pp. 1132-1137 ◽  
Author(s):  
Young-Soon JUNG ◽  
Wataru NAKAO ◽  
Koji TAKAHASHI ◽  
Kotoji ANDO ◽  
Shinji SAITO
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Crack Healing ◽  
Low Oxygen

Quantitative evaluation of the oxidation behavior of ZrB2-15 vol.%SiC at a low oxygen partial pressure

Vacuum ◽  
2013 ◽  
Vol 88 ◽  
pp. 98-102 ◽  
Author(s):  
Ai Momozawa ◽  
Rong Tu ◽  
Takashi Goto ◽  
Yuuki Kubota ◽  
Hiroshi Hatta ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Quantitative Evaluation ◽  
Oxidation Behavior ◽  
Low Oxygen

Enhanced superconductivity in Nd1+xBa2-xCu3O7+δby low oxygen partial pressure annealing

1994 ◽  
Vol 23 (11) ◽  
pp. 1117-1120 ◽  
Author(s):  
M. J. Kramer ◽  
A. Karion ◽  
K. W. Dennis ◽  
M. Park ◽  
R. W. McCallum
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Enhanced Superconductivity

Recrystallization of Oxygen Contaminated Al Films

1986 ◽  
Vol 71 ◽  
Author(s):  
G.J. Van Der Kolk ◽  
M.J. Verkerk
Keyword(s):  
Grain Size ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Relative Increase ◽  
Partial Pressures ◽  
Average Grain Size

AbstractAl was evaporated at oxygen partial pressures, PO2, varying between 10−7 and 10−4 Pa on substrates of silicon nitride. The substrate temperature was varied between 20 °C and 250°C. The films were annealed at temperatures up to 500°C.For Al films deposited at 20°C, it was found that the average grain size decreases with increasing oxygen partial pressure. After annealing recrystallization was observed. The relative increase of grain size was less for higher values of pO2. Annealing gave rise to a broad grain size distribution.For Al films deposited at 250°C, the presence of oxygen caused the growth of rough inhomogeneous films. This inhomogeneous structure remained during annealing.

Tensile Properties and Creep Behavior of SiC-Based Fibers under Various Oxygen Partial Pressures

2005 ◽  
Vol 475-479 ◽  
pp. 1333-1336 ◽  
Author(s):  
Jan Ji Sha ◽  
J.S. Park ◽  
Tatsuya Hinoki ◽  
Akira Kohyama ◽  
J. Yu
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Tensile Properties ◽  
Creep Behavior ◽  
Elevated Temperatures ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Sic Fibers ◽  
Partial Pressures ◽  
Ar Gas

Three kinds of atmospheres (air, highly-pure Ar and ultra highly-pure Ar gas) with different oxygen partial pressures were applied to investigate the tensile properties and creep behavior of SiC fibers such as Hi-NicalonTM and TyrannoTM-SA. These fibers were annealed and crept at elevated temperatures ranging from1273-1773 K in such environments. After annealing at 1773 K, the room temperature tensile strengths of SiC-based fibers decreased with decreasing the oxygen partial pressure and the near stoichiometric fiber TyrannoTM-SA shows excellent strength retention. At temperatures above the 1573 K, the creep resistance of SiC fibers evaluated by bending stress relaxation (BSR) method under high oxygen partial pressure was lower than that of in low oxygen partial pressure. The microstructural features on these fibers were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

Preparation of NdBaCuO superconductor by zone-melting under low oxygen partial pressure

2003 ◽  
Vol 386 ◽  
pp. 241-244 ◽  
Author(s):  
Zhanguo Fan ◽  
Weiying Gao ◽  
Fenghua Li ◽  
Jue Wang ◽  
Deahua Soh
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zone Melting ◽  
Low Oxygen
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