Growth of CuO nanowires on Si substrate by thermal oxidation method and its interfacial delamination mechanism.

2019 ◽  
Vol 2019.27 (0) ◽  
pp. 510
Author(s):  
Issei YANAGISAWA ◽  
Mitsuhiro MATSUNAGA ◽  
Yuki DOI ◽  
Fumiya KIMURA ◽  
Atsushi HOSOI ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Si Substrate ◽  
Oxidation Method ◽  
Interfacial Delamination ◽  
Cuo Nanowires

Synthesis of CuO nanowires on Cu-foil using thermal oxidation method, a novel annealing process

2016 ◽  
Vol 30 (05) ◽  
pp. 1650039 ◽  
Author(s):  
Hosein Eshghi ◽  
Mehdi Torabi Goodarzi
Keyword(s):  
Electron Microscopy ◽  
Thermal Oxidation ◽  
Cupric Oxide ◽  
Band Gap Energy ◽  
Optical Investigation ◽  
Spectra Analysis ◽  
Oxidation Method ◽  
Cuo Nanowires ◽  
Air Atmosphere ◽  
Crystallite Sizes

Cupric oxide (CuO) nanowires (NWs) on Cu-foils were prepared by thermal oxidation method in air atmosphere using two annealing manners (continuous and steps) in the temperature ranges of 400–500[Formula: see text]C and 400–600[Formula: see text]C. Morphology and microstructure of the NWs was studied using field effect scanning electron microscopy (FESEM), X-ray diffractogram (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Optical reflectance spectrum was used for the optical investigation of the layers. We found the NWs formed have two different morphologies, curved and straight, with diameters between 50 nm and 200 nm and lengths between 5 [Formula: see text]m and 10 [Formula: see text]m. SAED pattern of a single NW revealed as a CuO single crystal with monoclinic structure. The reflectance spectra analysis based on Kubelka–Munk method showed that the band gap energy of the CuO NWs are varying in the range of 1.40–1.47 eV depending on the crystallite sizes of the NWs, a confirmation for the happening of the quantum confined effect in these samples.

Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method

2013 ◽  
Vol 384 ◽  
pp. 100-106 ◽  
Author(s):  
Vu Xuan Hien ◽  
Se-Yun Kim ◽  
Joon-Hyung Lee ◽  
Jeong-Joo Kim ◽  
Young-Woo Heo
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Method ◽  
Cuo Nanowires ◽  
Cu Foil

Effect of annealing temperature on morphology and structure of CuO nanowires grown by thermal oxidation method

2019 ◽  
Vol 505 ◽  
pp. 33-37 ◽  
Author(s):  
Thi Ha Tran ◽  
Manh Hong Nguyen ◽  
Thi Huyen Trang Nguyen ◽  
Vu Phuong Thao Dao ◽  
Phuong Mai Nguyen ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Annealing Temperature ◽  
Oxidation Method ◽  
Cuo Nanowires ◽  
Morphology And Structure

Enhanced adhesion and field emission of CuO nanowires synthesized by simply modified thermal oxidation technique

2016 ◽  
Vol 27 (39) ◽  
pp. 395605 ◽  
Author(s):  
C M Tang ◽  
Y B Wang ◽  
R H Yao ◽  
H L Ning ◽  
W Q Qiu ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Field Emission ◽  
Cuo Nanowires

scholarly journals Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1051 ◽  
Author(s):  
Raitis Sondors ◽  
Jelena Kosmaca ◽  
Gunta Kunakova ◽  
Liga Jasulaneca ◽  
Matiss Martins Ramma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Aspect Ratio ◽  
Electric Field ◽  
Thermal Oxidation ◽  
Size Distribution ◽  
High Aspect Ratio ◽  
Growth Conditions ◽  
Cuo Nanowires ◽  
Young’S Moduli ◽  
Order Of Magnitude

Size distribution, Young’s moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis. Young’s moduli determined from resonance and bending experiments show similar diameter dependencies and increase above 200 GPa for nanowires with diameters narrower than 50 nm. The nanowires synthesized by simple thermal oxidation possess electrical resistivities about one order of magnitude lower than the nanowires synthesized by electric field assisted approach in wet air. The high aspect ratio, mechanical strength and robust electrical properties suggest CuO nanowires as promising candidates for NEMS actuators.

Retarded thermal oxidation of strained Si substrate

2014 ◽  
Vol 23 (6) ◽  
pp. 066103
Author(s):  
Jia-Bao Sun ◽  
Xiao-Yu Tang ◽  
Zhou-Wei Yang ◽  
Yi Shi ◽  
Yi Zhao
Keyword(s):  
Thermal Oxidation ◽  
Si Substrate ◽  
Strained Si
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