Effect of Residual Stress on Breakdown Characteristic of Dielectric Thin Films used for Transistors

2002 ◽  
Vol 2002 (0) ◽  
pp. 247-248
Author(s):  
Hideo MIURA
Author(s):  
Weontae Oh ◽  
Tae Joo Shin ◽  
Moonhor Ree ◽  
Moon Young Jin ◽  
Kookheon Char

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.


1995 ◽  
Vol 31 (21) ◽  
pp. 1814-1815 ◽  
Author(s):  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia ◽  
X.D. Wu

2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han

2017 ◽  
Vol 101 (2) ◽  
pp. 674-682 ◽  
Author(s):  
Ming-Chuan Chang ◽  
Chieh-Szu Huang ◽  
Yi-Da Ho ◽  
Cheng-Liang Huang

1988 ◽  
Vol 52 (21) ◽  
pp. 1825-1827 ◽  
Author(s):  
H. S. Kwok ◽  
P. Mattocks ◽  
L. Shi ◽  
X. W. Wang ◽  
S. Witanachchi ◽  
...  

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